검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Local strained silicon platform based on differential SiGe/Si epitaxy Karmous A, Oehme M, Werner J, Kirfel O, Kasper E, Schulze J Journal of Crystal Growth, 324(1), 154, 2011 |
| 2 |
Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD Zhou ZW, Cai ZM, Li C, Lai HK, Chen SY, Yu JZ Applied Surface Science, 255(5), 2660, 2008 |
| 3 |
Fabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ions Sawano K, Fukumoto A, Hoshi Y, Yamanaka J, Nakagawa K, Shiraki Y Thin Solid Films, 517(1), 87, 2008 |
| 4 |
Development of a new type of SiGe thin strain relaxed buffer based on the incorporation of a carbon-containing layer Delhougne R, Meunier-Beillard P, Caymax M, Loo R, Vandervorst W Applied Surface Science, 224(1-4), 91, 2004 |
| 5 |
SiGePIN photodetector for infrared optical fiber links operating at 1.25 Gbit/s Jutzi M, Berroth M, Wohl G, Parry C, Oehme M, Bauer M, Schollhorn C, Kasper E Applied Surface Science, 224(1-4), 170, 2004 |
| 6 |
Matrix effects in SIMS depth profiles of SiGe relaxed buffer layers Sanchez-Almazan F, Napolitani E, Carnera A, Drigo AV, Isella G, von Kanel H, Berti M Applied Surface Science, 231-2, 704, 2004 |
| 7 |
Selective epitaxial deposition of strained silicon: a simple and effective method for fabricating high performance MOSFET devices Delhougne R, Eneman G, Caymax M, Loo R, Meunier-Beillard P, Verheyen P, Vandervorst W, De Meyer K, Heyns M Solid-State Electronics, 48(8), 1307, 2004 |
| 8 |
Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices Isella G, Chrastina D, Rossner B, Hackbarth T, Herzog H, Konig U, von Kanel H Solid-State Electronics, 48(8), 1317, 2004 |
| 9 |
High quality SiGe electronic material grown by low energy plasma enhanced chemical vapour deposition Chrastina D, Isella G, Rossner B, Bollani M, Muller E, Hackbarth T, von Kanel H Thin Solid Films, 459(1-2), 37, 2004 |
| 10 |
A growth method to obtain flat and relaxed In0.2Ga0.8As on GaAs (001) developed through in situ monitoring of surface topography and stress evolution Gonzalez MU, Gonzalez Y, Gonzalez L, Calleja M, Silveira JP, Garcia JM, Briones F Journal of Crystal Growth, 227, 36, 2001 |