화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Density gradient in SiO2 films on silicon as revealed by positron annihilation spectroscopy
Revesz AG, Anwand W, Brauer G, Hughes HL, Skorupa W
Applied Surface Science, 194(1-4), 101, 2002
2 Hydrogen in buried SiO2 layers
Revesz AG, Stahlbush RE, Hughes HL
Journal of the Electrochemical Society, 147(11), 4279, 2000
3 Structural rearrangement of SiO2 films during their growth and annealing
Revesz AG
Journal of the Electrochemical Society, 146(6), 2225, 1999
4 Oxygen vacancies in SiO2, layers an Si produced at high temperature
Afanas'ev VV, Stesmans A, Revesz AG, Hughes HL
Journal of the Electrochemical Society, 145(9), 3157, 1998
5 Trap Generation in Buried Oxides of Silicon-on-Insulator Structures by Vacuum-Ultraviolet Radiation
Afanasev VV, Stesmans A, Revesz AG, Hughes HL
Journal of the Electrochemical Society, 144(2), 749, 1997
6 Conducting and Charge-Trapping Defects in Buried Oxide Layers of Simox Structures
Afanasev VV, Brown GA, Hughes HL, Liu ST, Revesz AG
Journal of the Electrochemical Society, 143(1), 347, 1996
7 Confinement Phenomena in Buried Oxides of Simox Structures as Affected by Processing
Afanasev VV, Revesz AG, Hughes HL
Journal of the Electrochemical Society, 143(2), 695, 1996
8 Charge Instability of Bonded Silicon Dioxide Layer Induced by Wet-Processing
Afanasev VV, Revesz AG, Brown GA, Hughes HL
Journal of the Electrochemical Society, 142(6), 1983, 1995
9 Deep and Shallow Electron Trapping in the Buried Oxide Layer of Simox Structures
Afanasev VV, Revesz AG, Brown GA, Hughes HL
Journal of the Electrochemical Society, 141(10), 2801, 1994