검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
A unified analytical and scalable lumped model of RF CMOS spiral inductors based on electromagnetic effects and circuit analysis Salimy S, Goullet A, Rhallabi A, Challali F, Toutain S, Saubat JC Solid-State Electronics, 61(1), 38, 2011 |
| 2 |
Etching studies of silica glasses in SF6/Ar inductively coupled plasmas: Implications for microfluidic devices fabrication Lallement L, Gosse C, Cardinaud C, Peignon-Fernandez MC, Rhallabi A Journal of Vacuum Science & Technology A, 28(2), 277, 2010 |
| 3 |
Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition Marcos G, Rhallabi A, Ranson P Applied Surface Science, 254(11), 3576, 2008 |
| 4 |
Modeling of the chemically assisted ion beam etching process: Application to the GaAs etching by Cl-2/Ar+ Elmonser L, Rhallabi A, Gaillard M, Landesman JP, Talneau A, Pommereau F, Bouadma N Journal of Vacuum Science & Technology A, 25(1), 126, 2007 |
| 5 |
Development of chemically assisted etching method for GaAs-based optoelectronic devices Gaillard M, Rhallabi A, Elmonser L, Talneau A, Pommereau F, Pagnod-Rossiaux P, Bouadma N Journal of Vacuum Science & Technology A, 23(2), 256, 2005 |
| 6 |
Chemically assisted ion beam etching of GaAs by argon and chlorine gases: Experimental and simulation investigations Rhallabi A, Gaillard M, Elmonser L, Marcos G, Talneau A, Pommereau F, Pagnod-Rossiaux P, Landesman JP, Bouadma N Journal of Vacuum Science & Technology B, 23(5), 1984, 2005 |
| 7 |
Topographic and kinetic effects of the SF6/O-2 rate during a cryogenic etching process of silicon Marcos G, Rhallabi A, Ranson P Journal of Vacuum Science & Technology B, 22(4), 1912, 2004 |
| 8 |
Monte Carlo simulation method for etching of deep trenches in Si by a SF6/O-2 plasma mixture Marcos G, Rhallabi A, Ranson P Journal of Vacuum Science & Technology A, 21(1), 87, 2003 |
| 9 |
Study of the early stage of SiO2 growth by a TEOS-O-2 plasma mixture using a three-dimensional Monte Carlo model Rhallabi A, Turban G Journal of Vacuum Science & Technology A, 19(3), 743, 2001 |
| 10 |
Estimation of surface kinetic parameters and two-dimensional simulation of InP pattern features during CH4-H-2 plasma etching Rhallabi A, Houlet L, Turban G Journal of Vacuum Science & Technology A, 18(4), 1366, 2000 |