화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Chemical Vapor Deposition of Azidoalkylsilane Monolayer Films
Vos R, Rolin C, Rip J, Conard T, Steylaerts T, Cabanilles MV, Levrie K, Jans K, Stakenborg T
Langmuir, 34(4), 1400, 2018
2 Smooth and high quality epitaxial strained Ge grown on SiGe strain relaxed buffers with 70-85% Ge
Loo R, Souriau L, Ong P, Kenis K, Rip J, Storck P, Buschhardt T, Vorderwestner M
Journal of Crystal Growth, 324(1), 15, 2011
3 Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions
Vincent B, Loo R, Vandervorst W, Delmotte J, Douhard B, Valev VK, Vanbel M, Verbiest T, Rip J, Brijs B, Conard T, Claypool C, Takeuchi S, Zaima S, Mitard J, De Jaeger B, Dekoster J, Caymax M
Solid-State Electronics, 60(1), 116, 2011
4 Epitaxy solutions for Ge MOS technology
Leys FE, Bonzom R, Loo R, Richard O, De Jaeger B, Van Steenbergen J, Dessein K, Conard T, Rip J, Bender H, Vandervorst W, Meuris M, Caymax M
Thin Solid Films, 508(1-2), 292, 2006