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| No. | Article |
|---|---|
| 1 |
Improvement of process parameters for polycrystalline silicon carbide low pressure chemical vapor deposition on 150 mm silicon substrate using monomethylsilane as precursor Ajayakumar A, Maruthoor S, Fuchs T, Rohlfing F, Jakovlev O, Wilde J, Reinecke H Thin Solid Films, 536, 94, 2013 |