| 1 |
Atom probe tomography evidence for uniform incorporation of Bi across the growth front in GaAs1-xBix/GaAs superlattice
Chen WX, Ronsheim PA, Wood AW, Forghani K, Guan YX, Kuech TF, Babcock SE
Journal of Crystal Growth, 446, 27, 2016 |
| 2 |
Dopant measurements in semiconductors with atom probe tomography
Ronsheim PA, Hatzistergos M, Jin S
Journal of Vacuum Science & Technology B, 28(1), C1E1, 2010 |
| 3 |
Application of electron holography to analysis of submicron structures
Gribelyuk MA, Domenicucci AG, Ronsheim PA, McMurray JS, Gluschenkov O
Journal of Vacuum Science & Technology B, 26(1), 408, 2008 |
| 4 |
Depth profiling of emerging materials for semiconductor devices
Ronsheim PA
Applied Surface Science, 252(19), 7201, 2006 |
| 5 |
Sputtered depth scales of multi-layered samples with in situ laser interferometry: arsenic diffusion in Si/SiGe layers
Ronsheim PA, Loesing R, Madan A
Applied Surface Science, 231-2, 762, 2004 |
| 6 |
Study of pre-equilibrium sputter rates for ultrashallow depth profiling with secondary ion mass spectrometry
Ronsheim PA, Murphy RJ
Journal of Vacuum Science & Technology B, 18(1), 501, 2000 |
| 7 |
Comparison of secondary ion mass spectrometry profiling of sub-100 nm ultrashallow junctions using NO2+ and O-2(+) sputtering
Ronsheim PA, Lee KL
Journal of Vacuum Science & Technology B, 16(1), 382, 1998 |
| 8 |
Effect of Matrix Stopping Power on Sputter Depth Profile Broadening
Ronsheim PA, Tejwani M
Journal of Vacuum Science & Technology B, 12(1), 254, 1994 |
