검색결과 : 21건
No. | Article |
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1 |
Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD Khosa RY, Chen JT, Palsson K, Karhu R, Hassan J, Rorsman N, Sveinbjornsson EO Solid-State Electronics, 153, 52, 2019 |
2 |
Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interface Chen JT, Pomeroy JW, Rorsman N, Xia C, Virojanadara C, Forsberg U, Kuball M, Janzen E Journal of Crystal Growth, 428, 54, 2015 |
3 |
Combined TiN- and TaN temperature compensated thin film resistors Malmros A, Andersson K, Rorsman N Thin Solid Films, 520(6), 2162, 2012 |
4 |
TiN thin film resistors for monolithic microwave integrated circuits Malmros A, Sudow M, Andersson K, Rorsman N Journal of Vacuum Science & Technology B, 28(5), 912, 2010 |
5 |
Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs Desmaris V, Shiu JY, Rorsman N, Zirath H, Chang EY Solid-State Electronics, 52(5), 632, 2008 |
6 |
Electro-thermal simulations of a microwave 4H-SiC MESFET on high purity semi-insulating substrate Hjelmgren H, Andersson K, Eriksson J, Nilsson PA, Sudow M, Rorsman N Solid-State Electronics, 51(8), 1144, 2007 |
7 |
Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As-In0.40Al0.60As-InPHEMT MMIC technology Malmkvist M, Mellberg A, Rorsman N, Zirath H, Grahn J Solid-State Electronics, 50(5), 858, 2006 |
8 |
Planar Schottky microwave diodes on 4H-SiC Sudow M, Rorsman N, Nilsson PA, Zirath H Materials Science Forum, 483, 937, 2005 |
9 |
Low-resistance Si/Ti/Al/Ni/Au multilayer ohmic contact to undoped AlGaN/GaN heterostructures Desmaris V, Eriksson J, Rorsman N, Zirath H Electrochemical and Solid State Letters, 7(4), G72, 2004 |
10 |
Fabrication and characterization of reactively sputtered TaN thin-film resistors for millimeter wave applications Mellberg A, Nicols SP, Rorsman N, Zirath H Electrochemical and Solid State Letters, 7(11), G261, 2004 |