검색결과 : 19건
| No. | Article |
|---|---|
| 1 |
Float-zone growth of silicon crystals using large-area seeding Menzel R, Rost HJ, Kiesling FM, Sylla L Journal of Crystal Growth, 515, 32, 2019 |
| 2 |
Defect formation in Si-crystals grown on large diameter bulk seeds by a modified FZ-method Rost HJ, Menzel R, Siche D, Juda U, Kayser S, Kiessling FM, Sylla L, Richter T Journal of Crystal Growth, 500, 5, 2018 |
| 3 |
Float-Zone silicon crystal growth at reduced RF frequencies Rost HJ, Menzel R, Luedge A, Riemann H Journal of Crystal Growth, 360, 43, 2012 |
| 4 |
Pseudohalide vapour growth of thick GaN layers Jacobs K, Siche D, Klimm D, Rost HJ, Gogova D Journal of Crystal Growth, 312(6), 750, 2010 |
| 5 |
Growth of GaN crystals from chlorine-free gas phase Siche D, Rost HJ, Bottcher K, Gogova D, Fornari R Journal of Crystal Growth, 310(5), 916, 2008 |
| 6 |
Polarity- and orientation-related defect distribution in 4H-SiC single crystals Rost HJ, Schmidbauer M, Siche D, Fornari R Journal of Crystal Growth, 290(1), 137, 2006 |
| 7 |
Influence of nitrogen doping on the properties of 4H-SiC single crystals grown by physical vapor transport Rost HJ, Doerschel J, Irmscher K, Schulz D, Siche D Journal of Crystal Growth, 257(1-2), 75, 2003 |
| 8 |
Evolution of domain walls in 6H-and 4H-SiC single crystals Siche D, Rost HJ, Doerschel J, Schulz D, Wollweber J Journal of Crystal Growth, 237, 1187, 2002 |
| 9 |
On mass transport and surface morphology of sublimation grown 4H silicon carbide Schulz D, Doerschel J, Lechner M, Rost HJ, Siche D, Wollweber J Journal of Crystal Growth, 246(1-2), 31, 2002 |
| 10 |
Model for macroscopic slits in 6H-and 4H-SiC single crystals Wollweber J, Rost HJ, Schulz D, Siche D Materials Science Forum, 389-3, 63, 2002 |