검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Investigation of foreign particles in polycrystalline silicon using infrared microscopy Zhang R, van Dyk EE, Rozgonyi GA, Rand J, Jonczyk R Solar Energy Materials and Solar Cells, 82(4), 577, 2004 |
| 2 |
Structure, energetics, and thermal stability of nitrogen-vacancy-related defects in nitrogen doped silicon Karoui A, Karoui FS, Rozgonyi GA, Hourai M, Sueoka K Journal of the Electrochemical Society, 150(12), G771, 2003 |
| 3 |
Bias dependent contrast mechanisms in EBIC images of MOS capacitors Kirk HR, Radzimski Z, Romanowski A, Rozgonyi GA Journal of the Electrochemical Society, 146(4), 1529, 1999 |
| 4 |
Lateral gettering of Fe on bulk and silicon-on-insulator wafers Beaman KL, Kononchuk O, Koveshnikov S, Osburn CM, Rozgonyi GA Journal of the Electrochemical Society, 146(5), 1925, 1999 |
| 5 |
Effect of heavy boron doping on oxide precipitate growth in Czochralski silicon Ono T, Asayama E, Horie H, Hourai M, Sueoka K, Tsuya H, Rozgonyi GA Journal of the Electrochemical Society, 146(6), 2239, 1999 |
| 6 |
Oxide precipitate-induced dislocation generation in heavily boron-doped Czochralski silicon Ono T, Romanowski A, Asayama E, Horie H, Sueoka K, Tsuya H, Rozgonyi GA Journal of the Electrochemical Society, 146(9), 3461, 1999 |
| 7 |
Oxygen precipitation behavior in 300 mm polished Czochralski silicon wafers Ono T, Rozgonyi GA, Au C, Messina T, Goodall RK, Huff HR Journal of the Electrochemical Society, 146(10), 3807, 1999 |
| 8 |
Metallic Impurity Gettering and Secondary Defect Formation in Megaelectron Volt Self-Implanted Czochralski and Float-Zone Silicon Brown RA, Kononchuk O, Bondarenko I, Romanowski A, Radzimski Z, Rozgonyi GA, Gonzalez F Journal of the Electrochemical Society, 144(8), 2872, 1997 |
| 9 |
Interdiffusion, Phase-Transformation, and Epitaxial CoSi2 Formation in Multilayer Co/Ti-Si(100) System Hong F, Rozgonyi GA Journal of the Electrochemical Society, 141(12), 3480, 1994 |