검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Double-polysilicon SiGe HBT architecture with lateral base link Fox A, Heinemann B, Rucker H Solid-State Electronics, 60(1), 93, 2011 |
| 2 |
Drain-extended MOS transistors capable for operation at 10 V and at radio frequencies Mai A, Rucker H Solid-State Electronics, 65-66, 45, 2011 |
| 3 |
A single-poly EEPROM cell for embedded memory applications Di Bartolomeo A, Rucker H, Schley P, Fox A, Lischke S, Na KY Solid-State Electronics, 53(6), 644, 2009 |
| 4 |
Base doping and dopant profile control of SiGe npn and pnp HBTs Tillack B, Heinemann B, Knoll D, Rucker H, Yamamoto Y Applied Surface Science, 254(19), 6013, 2008 |
| 5 |
Impact of emitter fabrication on the yield of SiGe HBTs Heinemann B, Rucker H, Tillack B Thin Solid Films, 517(1), 71, 2008 |
| 6 |
Atomic layer processing for doping of SiGe Tillack B, Yuji YA, Bolze D, Heinemann B, Rucker H, Knoll D, Murota J, Mehr W Thin Solid Films, 508(1-2), 279, 2006 |
| 7 |
Circuit applications of high-performance SiGe : C HBTs integrated in BiCMOS technology Winkler W, Borngraber J, Heinemann B, Rucker H, Barth R, Bauer J, Bolze D, Drews J, Ehwald KE, Grabolla T, Haak U, Hoppner W, Knoll D, Kruger D, Kuck B, Kurps R, Marschmeyer M, Richter H, Schley P, Schmidt D, Scholz R, Tillack B, Wolansky D, Wulf HE, Yamamoto Y, Zaumseil P Applied Surface Science, 224(1-4), 297, 2004 |
| 8 |
Diffusion and segregation of shallow As, and Sb junctions in silicon Kruger D, Rucker H, Heinemann B, Melnik V, Kurps R, Bolze D Journal of Vacuum Science & Technology B, 22(1), 455, 2004 |
| 9 |
Tailoring dopant diffusion for advanced SiGe : C heterojunction bipolar transistors Rucker H, Heinemann B Solid-State Electronics, 44(5), 783, 2000 |
| 10 |
Effects of carbon on boron diffusion in SiGe : Principles and impact on bipolar devices Osten HJ, Heinemann B, Knoll D, Lippert G, Rucker H Journal of Vacuum Science & Technology B, 16(3), 1750, 1998 |