화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 Mask-free three-dimensional epitaxial growth of III-nitrides
Rudzinski M, Zlotnik S, Wojcik M, Gaca J, Janicki L, Kudrawiec R
Journal of Materials Science, 56(1), 558, 2021
2 Growth and thermal annealing for acceptor activation of p-type (Al)GaN epitaxial structures: Technological challenges and risks
Zlotnik S, Sitek J, Rosinski K, Michalowski PP, Gaca J, Wojcik M, Rudzinski M
Applied Surface Science, 488, 688, 2019
3 MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
Lemettinen J, Okumura H, Kim I, Rudzinski M, Grzonka J, Palacios T, Suihkonen S
Journal of Crystal Growth, 487, 50, 2018
4 Growth of aluminium nitride with linear change of ammonia flow
Caban P, Rudzinski M, Wojcik M, Gaca J, Strupinski W
Journal of Crystal Growth, 414, 81, 2015
5 Simultaneous growth of GaN/AlGaN quantum wells on c-, a-, m-, and (20.1)-plane GaN bulk substrates obtained by the ammonothermal method: Structural studies
Rudzinski M, Kudrawiec R, Patriarche G, Kucharski R, Caban P, Strupinski W
Journal of Crystal Growth, 414, 87, 2015
6 Growth of GaN epilayers on c-, m-, a-, and (20.1)-plane GaN bulk substrates obtained by ammonothermal method
Rudzinski M, Kudrawiec R, Janicki L, Serafinczuk J, Kucharski R, Zajac M, Misiewicz J, Doradzinski R, Dwilinski R, Strupinski W
Journal of Crystal Growth, 328(1), 5, 2011
7 Recent achievements in AMMONO-bulk method
Dwilinski R, Doradzinski R, Garczynski J, Sierzputowski L, Kucharski R, Zajac M, Rudzinski M, Kudrawiec R, Serafinczuk J, Strupinski W
Journal of Crystal Growth, 312(18), 2499, 2010
8 Application of contactless electroreflectance to study the epi readiness of m-plane GaN substrates obtained by ammonothermal method
Kudrawiec R, Kucharski R, Rudzinski M, Zajac M, Misiewicz J, Strupinski W, Doradzinski R, Dwilinski R
Journal of Vacuum Science & Technology A, 28(6), L18, 2010
9 Homoepitaxy on bulk ammonothermal GaN
Dwilinski R, Doradzinski R, Garczynski J, Sierzputowski LP, Zajac M, Rudzinski M
Journal of Crystal Growth, 311(10), 3058, 2009
10 Screening effect in contactless electroreflectance spectroscopy observed for AlGaN/GaN heterostructures with two dimensional electron gas
Motyka M, Kudrawiec R, Syperek M, Misiewicz J, Rudzinski M, Hageman PR, Larsen PK
Thin Solid Films, 515(11), 4662, 2007