검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Dual-damascene Cu/low-k interconnect fabrication scheme using dissoluble hard mask material Furusawa T, Machida S, Ryuzaki D, Sameshima K, Ishida T, Ishikawa K, Miura N, Konishi N, Saito T, Yamaguchi H Journal of the Electrochemical Society, 153(2), G160, 2006 |
| 2 |
Time-dependent dielectric-constant increase reliability issue for low dielectric-constant materials Ryuzaki D, Ishida T, Furusawa T Journal of the Electrochemical Society, 150(12), F203, 2003 |
| 3 |
Copper blocking ability of nitrogen-incorporated silicon oxide film Takeda K, Ryuzaki D, Mine T, Hinode K, Yoneyama R Journal of Vacuum Science & Technology B, 21(4), 1323, 2003 |
| 4 |
Oxygen plasma resistance of low-k organosilica glass films Furusawa T, Ryuzaki D, Yoneyama R, Homma Y, Hinode K Electrochemical and Solid State Letters, 4(3), G31, 2001 |
| 5 |
Direct resist removal process from copper-exposed vias for low-parasitic-capacitance interconnects Furusawa T, Sakuma N, Ryuzaki D, Kondo S, Takeda K, Machida S, Yoneyama R, Hinode K Journal of the Electrochemical Society, 148(4), G190, 2001 |
| 6 |
Heat and moisture resistance of siloxane-based low-dielectric-constant materials Furusawa T, Ryuzaki D, Yoneyama R, Homma Y, Hinode K Journal of the Electrochemical Society, 148(9), F175, 2001 |