화학공학소재연구정보센터
검색결과 : 51건
No. Article
1 Insights from molecular dynamics simulations on structural organization and diffusive dynamics of an ionic liquid at solid and vacuum interfaces
Vucemilovic-Alagic N, Banhatti RD, Stepic R, Wick CR, Berger D, Gaimann MU, Baer A, Harting J, Smith DM, Smith AS
Journal of Colloid and Interface Science, 553, 350, 2019
2 Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates
Michal K, Adam A, Edmund D, Robert K, Milan T, Agata L, Alexandros G, Jan K
Thin Solid Films, 672, 114, 2019
3 AFM characterization of patterned sapphire substrate with dense cone arrays: Image artifacts and tip-cone convolution effect
Shen J, Zhang D, Zhang FH, Gan Y
Applied Surface Science, 433, 358, 2018
4 InGaN-based light-emitting diodes grown on various aspect ratios of concave nanopattern sapphire substrate
Ke WC, Chiang CY, Son WD, Lee FW
Applied Surface Science, 456, 967, 2018
5 Defect analysis of the LED structure deposited on the sapphire substrate
Nie QC, Jiang ZM, Gan ZY, Liu S, Yan H, Fang HS
Journal of Crystal Growth, 488, 1, 2018
6 Characteristic comparison between GaN layer grown on c-plane cone shape patterned sapphire substrate and planar c-plane sapphire substrate by HVPE
Lee WJ, Park MS, Lee WJ, Choi YJ, Lee HY
Journal of Crystal Growth, 493, 8, 2018
7 Pretreatment by selective ion-implantation for epitaxial lateral overgrowth of GaN on patterned sapphire substrate
Kim DS, Jeong WS, Ko H, Lee JS, Byun D
Thin Solid Films, 641, 2, 2017
8 Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates
Lee FW, Ke WC, Cheng CH, Liao BW, Chen WK
Applied Surface Science, 375, 223, 2016
9 The effect of nucleation layer thickness on the structural evolution and crystal quality of bulk GaN grown by a two-step process on cone-patterned sapphire substrate
Shang L, Zhai GM, Mei FH, Jia W, Yu CY, Liu XG, Xu BS
Journal of Crystal Growth, 442, 89, 2016
10 Energy transfer and dissipation processes studied using photoluminescence of Eu3+ ions doped in epitaxial ZnO films
Akazawa H, Shinojima H
Thin Solid Films, 616, 204, 2016