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Insights from molecular dynamics simulations on structural organization and diffusive dynamics of an ionic liquid at solid and vacuum interfaces Vucemilovic-Alagic N, Banhatti RD, Stepic R, Wick CR, Berger D, Gaimann MU, Baer A, Harting J, Smith DM, Smith AS Journal of Colloid and Interface Science, 553, 350, 2019 |
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Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates Michal K, Adam A, Edmund D, Robert K, Milan T, Agata L, Alexandros G, Jan K Thin Solid Films, 672, 114, 2019 |
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AFM characterization of patterned sapphire substrate with dense cone arrays: Image artifacts and tip-cone convolution effect Shen J, Zhang D, Zhang FH, Gan Y Applied Surface Science, 433, 358, 2018 |
4 |
InGaN-based light-emitting diodes grown on various aspect ratios of concave nanopattern sapphire substrate Ke WC, Chiang CY, Son WD, Lee FW Applied Surface Science, 456, 967, 2018 |
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Defect analysis of the LED structure deposited on the sapphire substrate Nie QC, Jiang ZM, Gan ZY, Liu S, Yan H, Fang HS Journal of Crystal Growth, 488, 1, 2018 |
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Characteristic comparison between GaN layer grown on c-plane cone shape patterned sapphire substrate and planar c-plane sapphire substrate by HVPE Lee WJ, Park MS, Lee WJ, Choi YJ, Lee HY Journal of Crystal Growth, 493, 8, 2018 |
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Pretreatment by selective ion-implantation for epitaxial lateral overgrowth of GaN on patterned sapphire substrate Kim DS, Jeong WS, Ko H, Lee JS, Byun D Thin Solid Films, 641, 2, 2017 |
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Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates Lee FW, Ke WC, Cheng CH, Liao BW, Chen WK Applied Surface Science, 375, 223, 2016 |
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The effect of nucleation layer thickness on the structural evolution and crystal quality of bulk GaN grown by a two-step process on cone-patterned sapphire substrate Shang L, Zhai GM, Mei FH, Jia W, Yu CY, Liu XG, Xu BS Journal of Crystal Growth, 442, 89, 2016 |
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Energy transfer and dissipation processes studied using photoluminescence of Eu3+ ions doped in epitaxial ZnO films Akazawa H, Shinojima H Thin Solid Films, 616, 204, 2016 |