1 |
Magnesium adsorption and incorporation in InN (0001) and (0 0 0 (1)over-bar) surfaces: A first-principles study Belabbes A, Kioseoglou J, Komninou P, Evangelakis GA, Ferhat M, Karakostas T Applied Surface Science, 255(20), 8475, 2009 |
2 |
Real time investigation of the growth of silicon carbide nanocrystals on Si(100) using synchrotron X-ray diffraction Milita S, De Santis M, Jones D, Parisini A, Palermo V Applied Surface Science, 254(7), 2162, 2008 |
3 |
A theoretical study of structural and electronic properties of a missing dimer defect on Si- and C-terminated SiC(001) Pieczyrak B, Jurczyszyn L Applied Surface Science, 254(14), 4357, 2008 |
4 |
Structure of GaSb/GaAs(001) surface using the first principles calculation Ishii A, Fujiwara K, Tsukamoto S, Kakuda N, Yamaguchi K, Arakawa Y Journal of Crystal Growth, 301, 880, 2007 |
5 |
The electron counting rule and passivation of compound semiconductor surfaces Srivastava GP Applied Surface Science, 252(21), 7600, 2006 |
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Calculation of surface optical properties: from qualitative understanding to quantitative predictions Schmidt WG, Seino K, Hahn PH, Bechstedt E, Lu W, Wang S, Bernholc J Thin Solid Films, 455-56, 764, 2004 |
7 |
Nanoscopic observation of structural and compositional changes for beta-FeSi2 thin film formation processes Yamamoto H, Yamaguchi K, Hojou K Thin Solid Films, 461(1), 99, 2004 |
8 |
Probing the internal structure of nanowires McLean AB, Hill IG Applied Surface Science, 162, 620, 2000 |
9 |
The sonochemical degradation of azobenzene and related azo dyes: Rate enhancements via Fenton's reactions Joseph JM, Destaillats H, Hung HM, Hoffmann MR Journal of Physical Chemistry A, 104(2), 301, 2000 |
10 |
Analysis of photoluminescence efficiency and surface recombination velocity of MBE-grown AlGaAs layers Adamowicz B, Hasegawa H Thin Solid Films, 367(1-2), 180, 2000 |