| 1 |
Systematic analysis of oxide trap distribution of 4H-SiC DMOSFETs using TSCIS and its correlation with BTI and SILC behavior
Baek S, Lee J, Park I, Baek RH, Lee JS
Solid-State Electronics, 140, 18, 2018 |
| 2 |
Quantifying the prevalence of fuel poverty across the European Union
Thomson H, Snell C
Energy Policy, 52, 563, 2013 |
| 3 |
Non volatile memory reliability evaluation based on oxide defect generation rate during stress and retention test
Aziza H, Portal JM, Plantier J, Reliaud C, Regnier A, Ogier JL
Solid-State Electronics, 78, 151, 2012 |
| 4 |
Advanced PBTI reliability with 0.69 nm EOT GdHfO gate dielectric
Cho M, Aoulaiche M, Degraeve R, Kaczer B, Kauerauf T, Ragnarsson LA, Adelmann C, Van Elshocht S, Hoffmann TY, Groeseneken G
Solid-State Electronics, 63(1), 5, 2011 |
| 5 |
Ionic liquids and catalysis: Recent progress from knowledge to applications
Olivier-Bourbigou H, Magna L, Morvan D
Applied Catalysis A: General, 373(1-2), 1, 2010 |
| 6 |
SILC decay in La2O3 gate dielectrics grown on Ge substrates subjected to constant voltage stress
Rahman MS, Evangelou EK, Androulidakis II, Dimoulas A, Mavrou G, Galata S
Solid-State Electronics, 54(9), 979, 2010 |
| 7 |
Electrical characteristic enhancement of metal-oxide-semiconductor devices by incorporating WON buffer layer at HfTaSiON/Si interface
Cheng CL, Chang-Liao KS, Chang HC, Wang TK
Solid-State Electronics, 50(6), 1024, 2006 |
| 8 |
Effects of plasma nitridation on ultra-thin gate oxide electrical and reliability characteristics
He YD, Xu MZ, Tan CH
Solid-State Electronics, 49(1), 57, 2005 |
| 9 |
Electrical characteristics of ultra-thin gate oxides (< 3 nm) prepared by direct current superimposed with alternating-current anodization
Chen ZH, Huang SW, Hwu JG
Solid-State Electronics, 48(1), 23, 2004 |
| 10 |
The SILC study by PDO method
Wang Z, Zhang HQ, Xu MZ, Tan CH
Solid-State Electronics, 48(12), 2335, 2004 |
