| 1 |
Low temperature silicon epitaxy from trichlorosilane via mesoplasma chemical vapor deposition
Fukuda J, Kambara M, Yoshida T
Thin Solid Films, 519(20), 6759, 2011 |
| 2 |
Phosphorus doping of silicon at substrate temperatures above 600 degrees C
Thompson PE, Jernigan GG, Simons D, Chi P, Jonker BT, van 't Erve OMJ
Thin Solid Films, 518, S270, 2010 |
| 3 |
Ultra-shallow junctions formed by quasi-epitaxial growth of boron and phosphorous-doped silicon films at 175 degrees C by rf-PECVD
Labrune M, Moreno M, Cabarrocas PRI
Thin Solid Films, 518(9), 2528, 2010 |
| 4 |
Enhancing epitaxial SixC1-x deposition by adding Ge
Ostermay I, Kammler T, Bartha JW, Kucher P
Thin Solid Films, 518(10), 2834, 2010 |
| 5 |
Doping of high-quality epitaxial silicon grown by hot-wire chemical vapor deposition near 700 degrees C
Martin IT, Branz HM, Stradins P, Young DL, Reedy RC, Teplin CW
Thin Solid Films, 517(12), 3496, 2009 |
| 6 |
Instantaneous cleaning of silicon substrates by mesoplasma for high-rate and low-temperature epitaxy
Diaz JMA, Harima K, Kambara M, Yoshida T
Thin Solid Films, 518(3), 976, 2009 |
| 7 |
Structural investigations of homoepitaxial Si films grown at low temperature by pulsed magnetron sputtering on Si(111) substrates
Fenske F, Schulze S, Hietschold M, Schmidbauer M
Thin Solid Films, 516(15), 4777, 2008 |
| 8 |
High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD
Yasutake K, Ohmi H, Kirihata Y, Kakiuchi H
Thin Solid Films, 517(1), 242, 2008 |
| 9 |
Stabilization of the pentagonal surface of the icosahedral AlPdMn quasicrystal by controlled Si absorption
Longchamp JN, Erbudak M, Weisskopf Y
Applied Surface Science, 253(14), 5947, 2007 |
| 10 |
Silicon layers atop iron silicide nanoislands on Si(100) substrate: Island fon-nation, silicon growth, morphology and structure
Galkin NG, Goroshko DL, Polyarnyi VO, Chusovitin EA, Park WJ, Park YS, Khang Y, Gutakovsky AK, Latyshev AV
Thin Solid Films, 515(20-21), 7805, 2007 |
