검색결과 : 102건
| No. | Article |
|---|---|
| 1 |
Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements Kriso C, Triozon F, Delerue C, Schneider L, Abbate F, Nolot E, Rideau D, Niquet YM, Mugny G, Tavernier C Solid-State Electronics, 129, 93, 2017 |
| 2 |
Spectral and barrier properties of heterocomposites based on poly (para-phenylene) disposed between the silicon films Balabai RM, Zdeschyts AV, Lubenets AG Molecular Crystals and Liquid Crystals, 639(1), 39, 2016 |
| 3 |
Electron mobility and spin lifetime enhancement in strained ultra-thin silicon films Osintsev D, Sverdlov V, Selberherr S Solid-State Electronics, 112, 46, 2015 |
| 4 |
Subband splitting and surface roughness induced spin relaxation in (001) silicon SOI MOSFETs Osintsev D, Baumgartner O, Stanojevic Z, Sverdlov V, Selberherr S Solid-State Electronics, 90, 34, 2013 |
| 5 |
Effects of high hydrogen dilution ratio on optical properties of hydrogenated nanocrystalline silicon thin films Guo LQ, Ding JN, Yang JC, Cheng GG, Ling ZY, Yuan NY Applied Surface Science, 257(23), 9840, 2011 |
| 6 |
Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film Koga K, Matsunaga T, Nakamura WM, Nakahara K, Kawashima Y, Uchida G, Kamataki K, Itagaki N, Shiratani M Thin Solid Films, 519(20), 6896, 2011 |
| 7 |
Oxidation of the surface of a thin amorphous silicon film Silva AG, Pedersen K, Li ZSS, Morgen P Thin Solid Films, 520(2), 697, 2011 |
| 8 |
용액 공정을 통한 도핑된 실리콘 나노입자의 합성과 특성 권하영, 임은희, 이성구, 이경균 Applied Chemistry for Engineering, 21(6), 694, 2010 |
| 9 |
The optoelectronic properties of silicon films deposited by inductively coupled plasma CVD Qin YL, Yan HQ, Li F, Qiao L, Liu QM, He DY Applied Surface Science, 257(3), 817, 2010 |
| 10 |
Effect of Ar in the source gas on the microstructure and optoelectronic properties of microcrystalline silicon films deposited by plasma-enhanced CVD Wang DS, Liu QM, Li F, Qin YL, Liu DQ, Tang ZG, Peng SL, He DY Applied Surface Science, 257(4), 1342, 2010 |