1 |
Electron spectroscopies for simultaneous chemical and electrical analysis Opila RL Applied Surface Science, 256(5), 1313, 2009 |
2 |
Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition Hinds BJ, Wang F, Wolfe DM, Hinkle CL, Lucovsky G Journal of Vacuum Science & Technology B, 16(4), 2171, 1998 |
3 |
Characterization of Excess Si in Nonstoichiometric SiO2-Films by Optical and Surface-Analysis Techniques Falcony C, Calleja W, Aceves M, Siqueiros JM, Machorro R, Cotaaraiza L, Soto G, Farias MH Journal of the Electrochemical Society, 144(1), 379, 1997 |
4 |
Characterization by X-Ray Photoelectron-Spectroscopy of the Chemical-Structure of Semiinsulating Polycrystalline Silicon Thin-Films Iacona F, Lombardo S, Campisano SU Journal of Vacuum Science & Technology B, 14(4), 2693, 1996 |
5 |
Effects of Nitrogen Trifluoride on the Properties of Plasma-Enhanced Chemical-Vapor-Deposited Semiinsulating Polysilicon Films Ranade RM, Ang SS, Brown WD Thin Solid Films, 258(1-2), 292, 1995 |
6 |
Optical-Properties of Nonstoichiometric SiO2 as a Function of Excess Silicon Content and Thermal Treatments Calleja W, Falcony C, Torres A, Aceves M, Osorio R Thin Solid Films, 270(1-2), 114, 1995 |
7 |
Low-Temperature (Less-Than-or-Equal-to-600-Degrees-C) Semiinsulating Oxygen-Doped Silicon Films by the PECVD Technique for Large-Area Power Applications Clough FJ, Brown AO, Madathil SN, Milne WI Thin Solid Films, 270(1-2), 517, 1995 |