| 1 |
Effect of strained Ge-based NMOSFETs with Ge0.93Si0.07 stressors on device layout
Hsu HW, Lee CC
Solid-State Electronics, 138, 113, 2017 |
| 2 |
Structures of a bi-functional Kunitz-type STI family inhibitor of serine and aspartic proteases: Could the aspartic protease inhibition have evolved from a canonical serine protease-binding loop?
Guerra Y, Valiente PA, Pons T, Berry C, Rudino-Pinera E
Journal of Structural Biology, 195(2), 259, 2016 |
| 3 |
Effects of shallow trench isolation on low frequency noise characteristics of source-follower transistors in CMOS image sensors
Kwon SK, Kwon HM, Choi WI, Song HS, Lee HD
Solid-State Electronics, 119, 29, 2016 |
| 4 |
Bulk FinFETs with body spacers for improving fin height variation
Wei X, Zhu HL, Zhang YB, Zhao C
Solid-State Electronics, 122, 45, 2016 |
| 5 |
Effect of strain rate on sooting limits in counterflow diffusion flames of gaseous hydrocarbon fuels: Sooting temperature index and sooting sensitivity index
Wang Y, Chung SH
Combustion and Flame, 161(5), 1224, 2014 |
| 6 |
Characterization and modeling of electrical stress degradation in STI-based integrated power devices
Reggiani S, Barone G, Gnani E, Gnudi A, Baccarani G, Poli S, Wise R, Chuang MY, Tian WD, Pendharkar S, Denison M
Solid-State Electronics, 102, 25, 2014 |
| 7 |
Investigation of consequent process-induced stress for N-type metal oxide semiconductor field effect transistor with a sunken shallow trench isolation pattern
Lee CC, Liu CH, Deng RH, Hsu HW, Chiang KN
Thin Solid Films, 557, 323, 2014 |
| 8 |
The importance of channel intersections in the catalytic performance of high silica stilbite
Davis TM, Chen CY, Zilkova N, Vitvarova-Prochazkova D, Cejka J, Zones SI
Journal of Catalysis, 298, 84, 2013 |
| 9 |
Modeling the geometric effects on programming characteristics for the TANOS device by developing a 3D self-consistent simulation
Jeon KS, Choe KS, Choi S, Park SY, Park YJ
Solid-State Electronics, 79, 117, 2013 |
| 10 |
Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
Redolfi A, Kubicek S, Rooyackers R, Kim MS, Sleeckx E, Devriendt K, Shamiryan D, Vandeweyer T, Delande T, Horiguchi N, Togo M, Wouters JMD, Jurczak M, Hoffmann T, Cockburn A, Gravey V, Diehl DL
Solid-State Electronics, 71, 106, 2012 |
