| 1 |
Device-quality GaN-dielectric interfaces by 300 degrees C remote plasma processing
Bae C, Rayner GB, Lucovsky G
Applied Surface Science, 216(1-4), 119, 2003 |
| 2 |
Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics
Lucovsky G, Yang H, Niimi H, Keister JW, Rowe JE, Thorpe MF, Phillips JC
Journal of Vacuum Science & Technology B, 18(3), 1742, 2000 |
| 3 |
In-Situ Investigation of the Passivation of Si and Ge by Electron-Cyclotron-Resonance Plasma-Enhanced Chemical-Vapor-Deposition of SiO2
Wang Y, Hu YZ, Irene EA
Journal of Vacuum Science & Technology B, 14(3), 1687, 1996 |
| 4 |
Characterization of the Si/SiO2 Interface Formed by Remote Plasma-Enhanced Chemical-Vapor-Deposition from SiH4/N2O with or Without Chlorine Addition
Park YB, Li XD, Rhee SW
Journal of Vacuum Science & Technology B, 14(4), 2660, 1996 |
| 5 |
High-Rate Low-Temperature Deposition of Silicon Dioxide Films by Remote Plasma-Enhanced Chemical-Vapor-Deposition Using Silicon Tetrachloride
Alonso JC, Ramirez SJ, Garcia M, Ortiz A
Journal of Vacuum Science & Technology A, 13(6), 2924, 1995 |
| 6 |
Formation of Si-SiO2 Stacked-Gate Structures by Plasma-Assisted and Rapid-Thermal Processing - Improved Device Performance Through Process Integration
Lucovsky G, Wortman JJ, Yasuda T, Xu XL, Misra V, Hattangady SV, Ma Y, Hornung B
Journal of Vacuum Science & Technology B, 12(4), 2839, 1994 |
