화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Modelling of B diffusion in the presence of Ga
Radic L, Saavedra AF, Jones KS, Law ME
Journal of Vacuum Science & Technology B, 24(1), 478, 2006
2 Comparison of {311} defect evolution in SIMOX and bonded SOI materials
Saavedra AF, Jones KS, Law ME, Chan KK
Journal of the Electrochemical Society, 151(4), G266, 2004
3 Secondary defect formation in bonded silicon-on-insulator after boron implantation
Saavedra AF, King AC, Jones KS, Jones EC, Chan KK
Journal of Vacuum Science & Technology B, 22(1), 459, 2004
4 Influence of the surface Si/buried oxide interface on extended defect evolution in silicon-on-insulator scaled to 300 angstrom
Saavedra AF, Frazer J, Jones KS, Avci I, Earles SK, Law ME, Jones EC
Journal of Vacuum Science & Technology B, 20(6), 2243, 2002