화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Influence of silicon nanocrystal size and density on the performance of non-volatile memory arrays
Rao RA, Gasquet HP, Steimle RF, Rinkenberger G, Straub S, Muralidhar R, Anderson SGH, Yater JA, Ledezma JC, Hamilton J, Acred B, Swift CT, Hradsky B, Peschke J, Sadd M, Prinz EJ, Chang KM, White BE
Solid-State Electronics, 49(11), 1722, 2005
2 A model for the channel potential of charge-trapping memories and its implications for device scaling
Sadd M, Anderson SGH, Hradsky B, Muralidhar R, Prinz EJ, Rao R, Straub S, Steimle RF, Swift CT, White BE, Yater JA
Solid-State Electronics, 49(11), 1754, 2005
3 Silicon nanocrystal based memory devices for NVM and DRAM applications
Rao RA, Steimle RF, Sadd M, Swift CT, Hradsky B, Straub S, Merchant T, Stoker M, Anderson SGH, Rossow M, Yater J, Acred B, Harber K, Prinz EJ, White BE, Muralidhar R
Solid-State Electronics, 48(9), 1463, 2004