| 1 |
Structural and optical properties of Ga auto-incorporated InAlN epilayers
Taylor E, Smith MD, Sadler TC, Lorenz K, Li HN, Alves E, Parbrook PJ, Martin RW
Journal of Crystal Growth, 408, 97, 2014 |
| 2 |
AlN heteroepitaxy on sapphire by metalorganic vapour phase epitaxy using low temperature nucleation layers
Li HN, Sadler TC, Parbrook PJ
Journal of Crystal Growth, 383, 72, 2013 |
| 3 |
The effects of varying metal precursor fluxes on the growth of InAlN by metal organic vapour phase epitaxy
Sadler TC, Kappers MJ, Oliver RA
Journal of Crystal Growth, 314(1), 13, 2011 |
| 4 |
The impact of hydrogen on indium incorporation and surface accumulation in InAlN epitaxy
Sadler TC, Kappers MJ, Oliver RA
Journal of Crystal Growth, 331(1), 4, 2011 |
| 5 |
The effect of annealing on the surface morphology of strained and unstrained InxAl1-xN thin films
Brice HR, Sadler TC, Kappers MJ, Oliver RA
Journal of Crystal Growth, 312(11), 1800, 2010 |
| 6 |
The effect of temperature and ammonia flux on the surface morphology and composition of InxAl1-xN epitaxial layers
Sadler TC, Kappers MJ, Oliver RA
Journal of Crystal Growth, 311(13), 3380, 2009 |
