검색결과 : 63건
| No. | Article |
|---|---|
| 1 |
Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse Hemmi F, Thomas C, Lai YC, Higo A, Watamura Y, Samukawa S, Otsuji T, Suemitsu T Solid-State Electronics, 137, 1, 2017 |
| 2 |
Bonding state and defects of nitrogen-doped graphene in oxygen reduction reaction Okada T, Inoue KY, Kalita G, Tanemura M, Matsue T, Meyyappan M, Samukawa S Chemical Physics Letters, 665, 117, 2016 |
| 3 |
Electron g-factor and spin decoherence in GaAs quantum nanodisks fabricated by fully top-down lithography Tanaka T, Kiba T, Higo A, Thomas C, Tamura Y, Samukawa S, Murayama A Journal of Crystal Growth, 425, 295, 2015 |
| 4 |
Surface/interface-related optical properties in Si nanodisks fabricated by neutral-beam etching using bio-templates Kiba T, Suzaki K, Li H, Igarashi M, Samukawa S, Murayama A Journal of Crystal Growth, 378, 493, 2013 |
| 5 |
Effect of PEGylation on Controllably Spaced Adsorption of Ferritin Molecules Tsukamoto R, Godonoga M, Matsuyama R, Igarashi M, Heddle JG, Samukawa S, Yamashita I Langmuir, 29(41), 12737, 2013 |
| 6 |
200-mm-diameter neutral beam source based on inductively coupled plasma etcher and silicon etching Kubota T, Nukaga O, Ueki S, Sugiyama M, Inamoto Y, Ohtake H, Samukawa S Journal of Vacuum Science & Technology A, 28(5), 1169, 2010 |
| 7 |
Effect of iodotrifluoromethane plasma for reducing ultraviolet light irradiation damage in dielectric film etching processes Ichihashi Y, Ishikawa Y, Shimizu R, Samukawa S Journal of Vacuum Science & Technology B, 28(3), 577, 2010 |
| 8 |
Mechanism of increase in charge-pumping current of metal-nitride-oxide-silicon-field effect transistors during thick dielectric film etching using fluorocarbon gas plasma Ichihashi Y, Ishikawa Y, Shimizu R, Samukawa S Journal of Vacuum Science & Technology B, 28(4), 829, 2010 |
| 9 |
Defect-free etching process for GaAs/AlGaAs hetero-nanostructure using chlorine/argon mixed neutral beam Wang XY, Huang CH, Ohno Y, Igarashi M, Murayama A, Samukawa S Journal of Vacuum Science & Technology B, 28(6), 1138, 2010 |
| 10 |
Reduction effect of line edge roughness on time-dependent dielectric breakdown lifetime of Cu/low-k interconnects by using CF3I etching Soda E, Oda N, Ito S, Kondo S, Saito S, Samukawa S Journal of Vacuum Science & Technology B, 27(2), 649, 2009 |