화학공학소재연구정보센터
검색결과 : 13건
No. Article
1 Characterizations of ZnO and Zn(1-x)CdxO thin films grown on Zn- and O-face ZnO substrates by metal organic chemical vapor deposition
Boukadhaba MA, Fouzri A, Saidi C, Sakly N, Souissi A, Bchetnia A, Sartel C, Sallet V, Oumezzine M
Journal of Crystal Growth, 395, 14, 2014
2 Effect of arsenic species on the kinetics of GaAs nanowires growth by molecular beam epitaxy
Sartel C, Dheeraj DL, Jabeen F, Harmand JC
Journal of Crystal Growth, 312(14), 2073, 2010
3 Homoepitaxy of ZnO on bulk and thin film substrates by low temperature metal organic chemical vapor deposition using tert-butanol
Sartel C, Sallet V, Lusson A, Haneche N, Laroche JM, Galtier P, Rogers DJ, Teherani FH
Journal of Vacuum Science & Technology B, 27(3), 1615, 2009
4 BGaN materials on GaN/sapphire substrate by MOVPE using N-2 carrier gas
Ougazzaden A, Gautier S, Sartel C, Maloufi N, Martin J, Jomard F
Journal of Crystal Growth, 298, 316, 2007
5 GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3
Gautier S, Sartel C, Ould-Saad S, Martin J, Sirenko A, Ougazzaden A
Journal of Crystal Growth, 298, 428, 2007
6 Evaluation of p-type doping for (1,1,-2,0) epitaxial layers grown on alpha-cut (1,1,-2,0) 4H-SiC substrates
Blanc C, Zielinski M, Souliere V, Sartel C, Juillaguet S, Contreras S, Camassel J, Monteil Y
Materials Science Forum, 483, 117, 2005
7 Aluminium doping of 4H-SiC grown with HexaMethylDiSilane
Sartel C, Souliere V, Zielinski M, Monteil Y, Camassel J, Rushworth S
Materials Science Forum, 483, 121, 2005
8 Comparative studies of (0001) 4H-SiC layers grown with either Silane or HexaMethylDiSilane Propane precursor systems.
Sartel C, Balloud C, Souliere V, Juillaguet S, Dazord J, Monteil Y, Camassel J, Rushworth S
Materials Science Forum, 457-460, 217, 2004
9 Investigation of < 1,1,-2,0 > epitaxial layers grown on a-cut 4H-SiC substrates.
Blanc C, Sartel C, Souliere V, Juillaguet S, Monteil Y, Camassel J
Materials Science Forum, 457-460, 237, 2004
10 Optical investigation of stacking faults and micro-crystalline inclusions in-low-doped 4H-SiC layers
Juillaguet S, Balloud C, Pernot J, Sartel C, Souliere V, Camassel J, Monteil Y
Materials Science Forum, 457-460, 577, 2004