검색결과 : 13건
No. | Article |
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1 |
Characterizations of ZnO and Zn(1-x)CdxO thin films grown on Zn- and O-face ZnO substrates by metal organic chemical vapor deposition Boukadhaba MA, Fouzri A, Saidi C, Sakly N, Souissi A, Bchetnia A, Sartel C, Sallet V, Oumezzine M Journal of Crystal Growth, 395, 14, 2014 |
2 |
Effect of arsenic species on the kinetics of GaAs nanowires growth by molecular beam epitaxy Sartel C, Dheeraj DL, Jabeen F, Harmand JC Journal of Crystal Growth, 312(14), 2073, 2010 |
3 |
Homoepitaxy of ZnO on bulk and thin film substrates by low temperature metal organic chemical vapor deposition using tert-butanol Sartel C, Sallet V, Lusson A, Haneche N, Laroche JM, Galtier P, Rogers DJ, Teherani FH Journal of Vacuum Science & Technology B, 27(3), 1615, 2009 |
4 |
BGaN materials on GaN/sapphire substrate by MOVPE using N-2 carrier gas Ougazzaden A, Gautier S, Sartel C, Maloufi N, Martin J, Jomard F Journal of Crystal Growth, 298, 316, 2007 |
5 |
GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3 Gautier S, Sartel C, Ould-Saad S, Martin J, Sirenko A, Ougazzaden A Journal of Crystal Growth, 298, 428, 2007 |
6 |
Evaluation of p-type doping for (1,1,-2,0) epitaxial layers grown on alpha-cut (1,1,-2,0) 4H-SiC substrates Blanc C, Zielinski M, Souliere V, Sartel C, Juillaguet S, Contreras S, Camassel J, Monteil Y Materials Science Forum, 483, 117, 2005 |
7 |
Aluminium doping of 4H-SiC grown with HexaMethylDiSilane Sartel C, Souliere V, Zielinski M, Monteil Y, Camassel J, Rushworth S Materials Science Forum, 483, 121, 2005 |
8 |
Comparative studies of (0001) 4H-SiC layers grown with either Silane or HexaMethylDiSilane Propane precursor systems. Sartel C, Balloud C, Souliere V, Juillaguet S, Dazord J, Monteil Y, Camassel J, Rushworth S Materials Science Forum, 457-460, 217, 2004 |
9 |
Investigation of < 1,1,-2,0 > epitaxial layers grown on a-cut 4H-SiC substrates. Blanc C, Sartel C, Souliere V, Juillaguet S, Monteil Y, Camassel J Materials Science Forum, 457-460, 237, 2004 |
10 |
Optical investigation of stacking faults and micro-crystalline inclusions in-low-doped 4H-SiC layers Juillaguet S, Balloud C, Pernot J, Sartel C, Souliere V, Camassel J, Monteil Y Materials Science Forum, 457-460, 577, 2004 |