| 1 |
Structural and electrical properties of Sb-doped SnO2 thin films prepared by metal organic decomposition
Sawahata J, Kawasaki T
Thin Solid Films, 685, 210, 2019 |
| 2 |
Effects of annealing temperature and Eu concentration on the structural and photoluminescence properties of Eu-doped SnO2 thin films prepared by a metal organic decomposition method
Sawahata J
Thin Solid Films, 656, 1, 2018 |
| 3 |
Incorporation sites and luminescence characterizations of Er-doped GaN grown by molecular beam epitaxy
Chen SQ, Seo J, Sawahata J, Akimoto K
Journal of Crystal Growth, 311(7), 2042, 2009 |
| 4 |
Relationship between defects and optical properties in Er-doped GaN
Chen SQ, Uedono A, Seo J, Sawahata J, Akimoto K
Journal of Crystal Growth, 311(10), 3097, 2009 |
| 5 |
Effects of V/III ratio on photoluminescence spectra of Eu-doped GaN grown by molecular beam epitaxy
Sawahata J, Seo J, Takiguchi M, Saito D, Nemoto S, Akimoto K
Journal of Crystal Growth, 301, 420, 2007 |
| 6 |
Substrate roughness dependence of structural and optical properties of Eu-doped GaN grown by gas source molecular beam epitaxy
Li ZQ, Bang HJ, Piao GX, Sawahata J, Akimoto K, Kinoshita H, Watanabe K
Journal of Crystal Growth, 234(1), 25, 2002 |
| 7 |
Growth of Eu-doped GaN by gas source molecular beam epitaxy and its optical properties
Li ZQ, Bang HJ, Piao GX, Sawahata J, Akimoto K
Journal of Crystal Growth, 240(3-4), 382, 2002 |
