검색결과 : 27건
| No. | Article |
|---|---|
| 1 |
Annealing effect on threading dislocations in a GaN grown on Si substrate Iwata H, Kobayashi H, Kamiya T, Kamei R, Saka H, Sawaki N, Irie M, Honda Y, Amano H Journal of Crystal Growth, 468, 835, 2017 |
| 2 |
Resonant Raman and FIIR spectra of carbon doped GaN Ito S, Kobayashi H, Araki K, Suzuki K, Sawaki N, Yamashita K, Honda Y, Amano H Journal of Crystal Growth, 414, 56, 2015 |
| 3 |
Optical properties of (1 (1)over-bar 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Chiu CH, Lin DW, Lin CC, Li ZY, Chen YC, Ling SC, Kuo HC, Lu TC, Wang SC, Liao WT, Tanikawa T, Honda Y, Yamaguchi M, Sawaki N Journal of Crystal Growth, 318(1), 500, 2011 |
| 4 |
Growth and properties of semi-polar GaN on a patterned silicon substrate Sawaki N, Hikosaka T, Koide N, Tanaka S, Honda Y, Yamaguchi M Journal of Crystal Growth, 311(10), 2867, 2009 |
| 5 |
HVPE growth of semi-polar (11(2)over-bar2)GaN on GaN template (113)Si substrate Suzuki N, Uchida T, Tanikawa T, Hikosaka T, Honda Y, Yamaguchi M, Sawaki N Journal of Crystal Growth, 311(10), 2875, 2009 |
| 6 |
Reduction of dislocations in a (11(2)over-bar2)GaN grown by selective MOVPE on (113)Si Tanikawa T, Kagohashi Y, Honda Y, Yamaguchi M, Sawaki N Journal of Crystal Growth, 311(10), 2879, 2009 |
| 7 |
Mg segregation in a (1(1)over-bar01) GaN grown on a 7 degrees off-axis (001) Si substrate by MOVPE Tomita K, Hikosaka T, Kachi T, Sawaki N Journal of Crystal Growth, 311(10), 2883, 2009 |
| 8 |
MOVPE growth and properties of GaN on (111)Si using an AlInN intermediate layer Irie M, Koide N, Honda Y, Yamaguchi M, Sawaki N Journal of Crystal Growth, 311(10), 2891, 2009 |
| 9 |
Maskless selective growth of semi-polar (11(2)over-bar2) GaN on Si (311) substrate by metal organic vapor phase epitaxy Yang M, Ahn HS, Tanikawa T, Honda Y, Yamaguchi M, Sawaki N Journal of Crystal Growth, 311(10), 2914, 2009 |
| 10 |
Growth of non-polar (1 1 (2)over-bar 0)GaN on a patterned (110)Si substrate by selective MOVPE Tanikawa T, Rudolph D, Hikosaka T, Honda Y, Yamaguchi M, Sawaki N Journal of Crystal Growth, 310(23), 4999, 2008 |