화학공학소재연구정보센터
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No. Article
1 Metal-insulator-semiconductor Schottky barrier structures fabricated using interfacial BN layers grown on GaN and SiC for optoelectronic device applications
Starikov D, Badi N, Berishev I, Medelci N, Kameli O, Sayhi M, Zomorrodian V, Bensaoula A
Journal of Vacuum Science & Technology A, 17(4), 1235, 1999
2 Mg doping studies of electron cyclotron resonance molecular beam epitaxy of GaN thin Films
Berishev I, Kim E, Fartassi A, Sayhi M, Bensaoula A
Journal of Vacuum Science & Technology A, 17(4), 2166, 1999