화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Process-dependent electronic states at Mo/hafnium oxide/Si interfaces
Walsh S, Fang L, Schaeffer JK, Brillson LJ
Journal of Vacuum Science & Technology A, 25(4), 1261, 2007
2 Characteristics of atomic-layer-deposited thin HfxZr1-xO2 gate dielectrics
Triyoso DH, Hegde RI, Schaeffer JK, Gregory R, Wang XD, Canonico M, Roan D, Hebert EA, Kim K, Jiang J, Rai R, Kaushik V, Samavedam SB, Rochat N
Journal of Vacuum Science & Technology B, 25(3), 845, 2007
3 Evaluation of lanthanum based gate dielectrics deposited by atomic layer deposition
Triyoso DH, Hegde RI, Grant JM, Schaeffer JK, Roan D, White BE, Tobin PJ
Journal of Vacuum Science & Technology B, 23(1), 288, 2005
4 Reactive physical vapor deposition of TixAlyN: Integrated plasma-surface modeling characterization
Zhang D, Schaeffer JK
Journal of Vacuum Science & Technology A, 22(2), 264, 2004
5 Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics
Schaeffer JK, Samavedam SB, Gilmer DC, Dhandapani V, Tobin PJ, Mogab J, Nguyen BY, White BE, Dakshina-Murthy S, Rai RS, Jiang ZX, Martin R, Raymond MV, Zavala M, La LB, Smith JA, Garcia R, Roan D, Kottke M, Gregory RB
Journal of Vacuum Science & Technology B, 21(1), 11, 2003