검색결과 : 5건
No. | Article |
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1 |
Process-dependent electronic states at Mo/hafnium oxide/Si interfaces Walsh S, Fang L, Schaeffer JK, Brillson LJ Journal of Vacuum Science & Technology A, 25(4), 1261, 2007 |
2 |
Characteristics of atomic-layer-deposited thin HfxZr1-xO2 gate dielectrics Triyoso DH, Hegde RI, Schaeffer JK, Gregory R, Wang XD, Canonico M, Roan D, Hebert EA, Kim K, Jiang J, Rai R, Kaushik V, Samavedam SB, Rochat N Journal of Vacuum Science & Technology B, 25(3), 845, 2007 |
3 |
Evaluation of lanthanum based gate dielectrics deposited by atomic layer deposition Triyoso DH, Hegde RI, Grant JM, Schaeffer JK, Roan D, White BE, Tobin PJ Journal of Vacuum Science & Technology B, 23(1), 288, 2005 |
4 |
Reactive physical vapor deposition of TixAlyN: Integrated plasma-surface modeling characterization Zhang D, Schaeffer JK Journal of Vacuum Science & Technology A, 22(2), 264, 2004 |
5 |
Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics Schaeffer JK, Samavedam SB, Gilmer DC, Dhandapani V, Tobin PJ, Mogab J, Nguyen BY, White BE, Dakshina-Murthy S, Rai RS, Jiang ZX, Martin R, Raymond MV, Zavala M, La LB, Smith JA, Garcia R, Roan D, Kottke M, Gregory RB Journal of Vacuum Science & Technology B, 21(1), 11, 2003 |