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Self-generated carbon nanotubes for protecting active sites on bifunctional Co/CoOx schottky junctions to promote oxygen reduction/evolution reactions via efficient valence transition Zhang P, Cai Z, You SJ, Wang FY, Dai Y, Zhang CY, Zhang YH, Ren NQ, Zou JL Journal of Colloid and Interface Science, 557, 580, 2019 |
2 |
Enhanced photoeletrocatalytic reduction dechlorinations of PCP by Ru-Pd BQDs anchored Titania NAEs composites with double Schottky junctions: First-principles evidence and experimental verifications Fan SY, Li XY, Tan J, Zeng LB, Yin ZF, Tade MO, Liu SM Applied Catalysis B: Environmental, 227, 499, 2018 |
3 |
Graphene-based heterojunction photocatalysts Li X, Shen RC, Ma S, Chen XB, Xie J Applied Surface Science, 430, 53, 2018 |
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Photovoltaic characterization of graphene/silicon Schottky junctions from local and macroscopic perspectives Hajkova Z, Ledinsky M, Vetushka A, Stuchlik J, Muller M, Fejfar A, Bousa M, Kalbac M, Frank O Chemical Physics Letters, 676, 82, 2017 |
5 |
Direct Growth of Nanocrystalline Graphene/Graphite Transparent Electrodes on Si/SiO2 for Metal-Free Schottky Junction Photodetectors Zhang ZX, Guo YX, Wang XJ, Li D, Wang FL, Xie SS Advanced Functional Materials, 24(6), 835, 2014 |
6 |
Solution-Processed Fullerene-Based Organic Schottky Junction Devices for Large-Open-Circuit-Voltage Organic Solar Cells Yang B, Guo FW, Yuan YB, Xiao ZG, Lu YZ, Dong QF, Huang JS Advanced Materials, 25(4), 572, 2013 |
7 |
Effect of work-function of contacting metal on metal-molecules-silicon junctions Hiremath RK, Rabinal MK, Mulimani BG Materials Chemistry and Physics, 124(2-3), 1121, 2010 |
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Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes Ayyildiz E, Cetin H, Horvath ZJ Applied Surface Science, 252(4), 1153, 2005 |
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SiC X-ray detectors for spectroscopy and imaging over a wide temperature range Bertuccio G, Casiraghi R, Gatti E, Maiocchi D, Nava F, Canali C, Cetronio A, Lanzieri C Materials Science Forum, 433-4, 941, 2002 |
10 |
Mass spectroscopy analysis during the deposition of a-SiC : H and a-C : H films produced by hot wire and hot wire plasma-assisted techniques Ferreira I, Silva V, Aguas H, Fortunato E, Martins R Applied Surface Science, 184(1-4), 60, 2001 |