화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Charge pumping and DCIV currents in SOI FinFETs
Zhang EX, Fleetwood DM, Francis SA, Zhang CX, El-Mamouni F, Schrimpf RD
Solid-State Electronics, 78, 75, 2012
2 Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling
Pantelides ST, Tsetseris L, Beck MJ, Rashkeev SN, Hadjisavvas G, Batyrev IG, Tuttle BR, Marinopoulos AG, Zhou XJ, Fleetwood DM, Schrimpf RD
Solid-State Electronics, 54(9), 841, 2010
3 Effects of fin width on memory windows in FinFET ZRAMs
Zhang EX, Fleetwood DM, Alles ML, Schrimpf RD, Mamouni FE, Xiong W, Cristoloveanu S
Solid-State Electronics, 54(10), 1155, 2010
4 A model of radiation effects in nitride-oxide films for power MOSFET applications
Raparla VAK, Lee SC, Schrimpf RD, Fleetwood DM, Galloway KF
Solid-State Electronics, 47(5), 775, 2003