| 1 |
Influence of a 5 A tantalum nitride interface layer on dielectric properties of zirconium-doped tantalum oxide high-k films
Tewg JY, Kuo Y, Lu J, Schueler BW
Journal of the Electrochemical Society, 152(8), G617, 2005 |
| 2 |
Special Issue - Secondary Ion Mass Spectrometry SIMS XIV - Proceedings of the Fourteenth International Conference on Secondary Ion Mass Spectrometry and Related Topics - San Diego, California, USA, September 14-19, 2003 - Preface
Hunter J, Schueler BW, Stevie FA
Applied Surface Science, 231-2, 1, 2004 |
| 3 |
Analysis of high-k hfO(2) and HfSiO4 dielectric films
Nieveen W, Schueler BW, Goodman G, Schnabel P, Moskito J, Mowat I, Chao G
Applied Surface Science, 231-2, 556, 2004 |
| 4 |
Electrical and physical characterization of zirconium-doped tantalum oxide thin films
Tewg JY, Kuo Y, Lu J, Schueler BW
Journal of the Electrochemical Society, 151(3), F59, 2004 |
| 5 |
Surface metal standards produced by ion implantation through a removable layer
Schueler BW, Granger CN, McCaig L, McKinley JM, Metz J, Mowat I, Reich DF, Smith S, Stevie FA, Yang MH
Applied Surface Science, 203, 847, 2003 |
| 6 |
Depth scale distortions in shallow implant secondary ion mass spectrometry profiles
Schueler BW, Reich DF
Journal of Vacuum Science & Technology B, 18(1), 496, 2000 |
| 7 |
Determination of trace metallic impurities on 200-mm silicon wafers by time-of-flight secondary-ion-mass spectroscopy
Chu PK, Schueler BW, Reich F, Lindley PM
Journal of Vacuum Science & Technology B, 15(6), 1908, 1997 |
| 8 |
Comparison of Submicron Particle Analysis by Auger-Electron Spectroscopy, Time-of-Flight Secondary-Ion Mass-Spectrometry, and Secondary-Electron Microscopy with Energy-Dispersive X-Ray Spectroscopy
Childs KD, Narum D, Lavanier LA, Lindley PM, Schueler BW, Mulholland G, Diebold AC
Journal of Vacuum Science & Technology A, 14(4), 2392, 1996 |
