화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 GaN-based lasers on SiC: influence of mirror reflectivity on L-I characteristics
Schwegler V, Schad SS, Scherer M, Kamp M, Ulu G, Emsley M, Unlu MS, Lell A, Bader S, Hahne B, Lugauer HJ, Kuhn F, Weimar A, Harle V
Journal of Crystal Growth, 230(3-4), 512, 2001
2 Multiple-step annealing for 50% enhanced p-conductivity of GaN
Chung HYA, Pelzmann A, Drechsler M, Scherer M, Schwegler V, Seyboth M, Kirchner C, Kamp M
Journal of Crystal Growth, 230(3-4), 549, 2001
3 Characterization of etched facets for GaN-based lasers
Scherer M, Schwegler V, Seyboth M, Eberhard F, Kirchner C, Kamp M, Ulu G, Unlu MS, Gruhler R, Hollricher O
Journal of Crystal Growth, 230(3-4), 554, 2001