검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Ambient temperature characteristics of Schottky contacts on 4H-SiC aged in air at 350 degrees C Adedeji AV, Ahyi AC, Williams JR, Mohney SE, Scofield JD Solid-State Electronics, 54(7), 736, 2010 |
| 2 |
Investigation of two-stage activation annealing of Al-implanted 4H-SiC layers Merrett JN, Scofield JD, Tsao BH, Mazzola M, Seale D, Draper WA, Sankin I, Casady JB, Bondarenko V Materials Science Forum, 457-460, 921, 2004 |
| 3 |
Investigation of dilute SF6 discharges for application to SiC reactive ion etching Scofield JD, Ganguly BN, Bletzinger P Journal of Vacuum Science & Technology A, 18(5), 2175, 2000 |
| 4 |
Preliminary investigation of SiC on silicon for biomedical applications Carter GE, Casady JB, Bonds J, Okhuysen ME, Scofield JD, Saddow SE Materials Science Forum, 338-3, 1149, 2000 |