화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?
Bennett NS, Smith AJ, Gwilliam RM, Webb RP, Sealy BJ, Cowern NEB, O'Reilly L, McNally PJ
Journal of Vacuum Science & Technology B, 26(1), 391, 2008
2 Enhanced n-type dopant solubility in tensile-strained Si
Bennett NS, Radamson HH, Beer CS, Smith AJ, Gwilliam RM, Cowern NEB, Sealy BJ
Thin Solid Films, 517(1), 331, 2008
3 Nanocrystalline Si studied by beam-based positron annihilation spectroscopy
Coleman PG, Pi XD, Gwilliam RM, Sealy BJ
Materials Science Forum, 445-6, 66, 2004
4 Electron field emission from amorphous silicon
Silva SRP, Forrest RD, Shannon JM, Sealy BJ
Journal of Vacuum Science & Technology B, 17(2), 596, 1999
5 Bond formation in ion beam synthesised amorphous gallium nitride
Almeida SA, Silva SRP, Sealy BJ, Watts JF
Thin Solid Films, 343-344, 632, 1999
6 The microstructural dependence of the opto-electronic properties of nitrogenated hydrogenated amorphous carbon thin films
Silva SRP, Khan RUA, Burden AP, Anguita JV, Shannon JM, Sealy BJ, Papworth AJ, Kiely CJ, Amaratunga GAJ
Thin Solid Films, 332(1-2), 118, 1998