화학공학소재연구정보센터
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No. Article
1 A new analytical compact model for two-dimensional finger photodiodes
Naeve T, Hohenbild M, Seegebrecht P
Solid-State Electronics, 52(2), 299, 2008
2 Impact of floating silicon film on small-signal parameters of fully depleted SOI-MOSFETs biased into accumulation
Wiatr M, Seegebrecht P
Solid-State Electronics, 49(5), 779, 2005
3 Impact of oxide damage on the light emission properties of MOS tunnel structures
Asli N, Shulekin AF, Yoder PD, Vexler MI, Grekhov IV, Seegebrecht P
Solid-State Electronics, 48(5), 731, 2004
4 Intrinsic inversion charge in the mobility region of fully depleted SOI-MOSFETs
Wiatr M, Seegebrecht P
Solid-State Electronics, 46(12), 2089, 2002
5 Current model considering oxide thickness non-uniformity in a MOS tunnel structure
Vexler MI, Shulekin AF, Dieker C, Zaporojtschenko V, Zimmermann H, Jager W, Grekhov IV, Seegebrecht P
Solid-State Electronics, 45(1), 19, 2001
6 Charge based modeling of the inner fringing capacitance of SOI-MOSFETs
Wiatr M, Seegebrecht P, Peters H
Solid-State Electronics, 45(4), 585, 2001
7 Experimental study of the current characteristics of thin silicon oxide films under dynamic stress
Zahlmann-Nowitzki JW, Nebrich L, Seegebrecht P
Solid-State Electronics, 45(8), 1309, 2001