화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Deposition of GaN films on crystalline rare earth oxides by MOCVD
Leathersich J, Arkun E, Clark A, Suvarna P, Marini J, Dargis R, Shahedipour-Sandvik F
Journal of Crystal Growth, 399, 49, 2014
2 High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy
Zhang YT, Dong X, Li GX, Li WC, Zhang BL, Du GT
Journal of Crystal Growth, 366, 35, 2013
3 Comparison of morphology, structure and optical properties of GaN powders prepared by Ga2O3 nitridation and gallium nitridation
Zeng XH, Han BX, Wang XD, Shi JP, Xu Y, Zhang JC, Wang JF, Zhang JP, Xu K
Journal of Crystal Growth, 367, 48, 2013
4 Effect of NH3 flow rate on m-plane GaN growth on m-plane SiC by metalorganic chemical vapor deposition
Sun Q, Yerino CD, Zhang Y, Cho YS, Kwon SY, Kong BH, Cho HK, Lee IH, Han J
Journal of Crystal Growth, 311(15), 3824, 2009
5 Resistivity control in unintentionally doped GaN films grown by MOCVD
Wickenden AE, Koleske DD, Henry RL, Twigg ME, Fatemi M
Journal of Crystal Growth, 260(1-2), 54, 2004
6 GaN thin film growth on GaAs (001) by CBE and plasma-assisted MBE
Kim E, Rusakova I, Berishev I, Tempez A, Bensaoula A
Journal of Crystal Growth, 243(3-4), 456, 2002