검색결과 : 134건
No. | Article |
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1 |
Homoepitaxy of Ge on ozone-treated Ge (100) substrate by ultra-high vacuum chemical vapor deposition Wang JQ, Shen LM, Lin GY, Wang JY, Xu JF, Chen SY, Xiang G, Li C Journal of Crystal Growth, 507, 113, 2019 |
2 |
Growth and characterization of GaAs nanowires on Ge(111) substrates by selective-area MOVPE Minami Y, Yoshida A, Motohisa J, Tomioka K Journal of Crystal Growth, 506, 135, 2019 |
3 |
GaAs (111) epilayers grown by MBE on Ge (111): Twin reduction and polarity Pelati D, Patriarche G, Mauguin O, Largeau L, Travers L, Brisset F, Glas F, Oehler F Journal of Crystal Growth, 519, 84, 2019 |
4 |
Thin Ge buffer layer on silicon for integration of III-V on silicon Yang JJ, Jurczak P, Cui F, Li KS, Tang MC, Billiald L, Beanland R, Sanchez AM, Liu HY Journal of Crystal Growth, 514, 109, 2019 |
5 |
Minority carrier lifetime of Ge film epitaxial grown on a large-grain seed layer on glass Nishida T, Nakata M, Suemasu T, Toko K Thin Solid Films, 681, 98, 2019 |
6 |
Computational analysis of heat transfer, thermal stress and dislocation density during resistively Czochralski growth of germanium single crystal Tavakoli MH, Renani EK, Honarmandnia M, Ezheiyan M Journal of Crystal Growth, 483, 125, 2018 |
7 |
Optimization of hetero-epitaxial growth for the threading dislocation density reduction of germanium epilayers Chong HN, Wang ZW, Chen CN, Xu ZM, Wu K, Wu L, Xu B, Ye H Journal of Crystal Growth, 488, 8, 2018 |
8 |
Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy Zheng J, Liu Z, Zhang YW, Zuo YH, Li CB, Xue CL, Cheng BW, Wang QM Journal of Crystal Growth, 492, 29, 2018 |
9 |
Structural and electrical properties of Ge-on-Si(001) layers with ultra heavy n-type doping grown by MBE Yurasov DV, Antonov AV, Drozdov MN, Yunin PA, Andreev BA, Bushuykin PA, Baydakova NA, Novikov AV Journal of Crystal Growth, 491, 26, 2018 |
10 |
Simulation for purification process of high pure germanium by zone refining method Ezheiyan M, Sadeghi H Journal of Crystal Growth, 462, 1, 2017 |