화학공학소재연구정보센터
검색결과 : 134건
No. Article
1 Homoepitaxy of Ge on ozone-treated Ge (100) substrate by ultra-high vacuum chemical vapor deposition
Wang JQ, Shen LM, Lin GY, Wang JY, Xu JF, Chen SY, Xiang G, Li C
Journal of Crystal Growth, 507, 113, 2019
2 Growth and characterization of GaAs nanowires on Ge(111) substrates by selective-area MOVPE
Minami Y, Yoshida A, Motohisa J, Tomioka K
Journal of Crystal Growth, 506, 135, 2019
3 GaAs (111) epilayers grown by MBE on Ge (111): Twin reduction and polarity
Pelati D, Patriarche G, Mauguin O, Largeau L, Travers L, Brisset F, Glas F, Oehler F
Journal of Crystal Growth, 519, 84, 2019
4 Thin Ge buffer layer on silicon for integration of III-V on silicon
Yang JJ, Jurczak P, Cui F, Li KS, Tang MC, Billiald L, Beanland R, Sanchez AM, Liu HY
Journal of Crystal Growth, 514, 109, 2019
5 Minority carrier lifetime of Ge film epitaxial grown on a large-grain seed layer on glass
Nishida T, Nakata M, Suemasu T, Toko K
Thin Solid Films, 681, 98, 2019
6 Computational analysis of heat transfer, thermal stress and dislocation density during resistively Czochralski growth of germanium single crystal
Tavakoli MH, Renani EK, Honarmandnia M, Ezheiyan M
Journal of Crystal Growth, 483, 125, 2018
7 Optimization of hetero-epitaxial growth for the threading dislocation density reduction of germanium epilayers
Chong HN, Wang ZW, Chen CN, Xu ZM, Wu K, Wu L, Xu B, Ye H
Journal of Crystal Growth, 488, 8, 2018
8 Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy
Zheng J, Liu Z, Zhang YW, Zuo YH, Li CB, Xue CL, Cheng BW, Wang QM
Journal of Crystal Growth, 492, 29, 2018
9 Structural and electrical properties of Ge-on-Si(001) layers with ultra heavy n-type doping grown by MBE
Yurasov DV, Antonov AV, Drozdov MN, Yunin PA, Andreev BA, Bushuykin PA, Baydakova NA, Novikov AV
Journal of Crystal Growth, 491, 26, 2018
10 Simulation for purification process of high pure germanium by zone refining method
Ezheiyan M, Sadeghi H
Journal of Crystal Growth, 462, 1, 2017