검색결과 : 783건
| No. | Article |
|---|---|
| 1 |
Investigation of pinholes in Czochralski silicon ingots in relation to structure loss Sortland OS, Ovrelid EJ, M'Hamdi M, Di Sabatino M Journal of Crystal Growth, 510, 1, 2019 |
| 2 |
Influence of extended crystallographic defects on the formation kinetics of oxygen-related thermal donors in multicrystalline silicon Bounab R, Veirman J, Albaric M, Bailly S, Marie B, Pihan E Journal of Crystal Growth, 510, 23, 2019 |
| 3 |
99.992% Si-28 CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits Mazzocchi V, Sennikov PG, Bulanov AD, Churbanov MF, Bertrand B, Hutin L, Barnes JP, Drozdov MN, Hartmann JM, Sanquer M Journal of Crystal Growth, 509, 1, 2019 |
| 4 |
X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(001) wafers Meduna M, Kreiliger T, Mauceri M, Puglisi M, Mancarella F, La Via F, Crippa D, Miglio L, von Kanel H Journal of Crystal Growth, 507, 70, 2019 |
| 5 |
Effect of growth rate on morphology evolution of 4H-SiC thick homoepitaxial layers Niu YX, Tang XY, Wu PF, Kong LY, Li Y, Xia JH, Tian HL, Tian L, Tian LX, Zhang WT, Jia RX, Yang F, Wu JM, Pan Y, Zhang YM Journal of Crystal Growth, 507, 143, 2019 |
| 6 |
The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates Yan GG, Liu XF, Shen ZW, Zhao WS, Wang L, Cui YX, Li JT, Zhang F, Sun GS, Zeng YP Journal of Crystal Growth, 507, 175, 2019 |
| 7 |
The influence of travelling magnetic field on phosphorus distribution in n-type multi-crystalline silicon Buchovska I, Dropka N, Kayser S, Kiessling FM Journal of Crystal Growth, 507, 299, 2019 |
| 8 |
Development of high power SiC devices for rail traction power systems Liu GY, Wu YB, Li KJ, Wang YG, Li CZ Journal of Crystal Growth, 507, 442, 2019 |
| 9 |
MOCVD growth of beta-FeSi2 film on modified Si surface by silver and enhancement of luminescence Akiyama K, Nojima S, Takahashi R, Matsumoto Y, Funakubo H Journal of Crystal Growth, 506, 131, 2019 |
| 10 |
Formation of thicker silicon wires on a sufficiently cooled substrate during the gas phase zinc reduction reaction of SiCl4 Shirane N, Inasawa S Journal of Crystal Growth, 506, 171, 2019 |