검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment Gregusova D, Gucmann F, Kudela R, Micusik M, Stoklas R, Valik L, Gregus J, Blaho M, Kordos P Applied Surface Science, 395, 140, 2017 |
| 2 |
Effects of As pressure on the quality of GaAs/AlGaAs quantum dots grown on silicon by droplet epitaxy Bietti S, Cavigli L, Minari S, Adorno S, Isella G, Vinattieri A, Gurioli M, Sanguinetti S Journal of Crystal Growth, 378, 497, 2013 |
| 3 |
Annealing induced anisotropy in GaAs/AlGaAs quantum dots grown by droplet epitaxy Adorno S, Bietti S, Sanguinetti S Journal of Crystal Growth, 378, 515, 2013 |
| 4 |
Self-assembled GaAs local artificial substrates on Si by droplet epitaxy Bietti S, Somaschini C, Koguchi N, Frigeri C, Sanguinetti S Journal of Crystal Growth, 323(1), 267, 2011 |
| 5 |
Investigation of interfacial layer development between thin Al2O3 films grown using atomic layer deposition and Si(100), Ge(100), or GaAs(100) Lamagna L, Scarel G, Fanciulli M, Pavia G Journal of Vacuum Science & Technology A, 27(3), 443, 2009 |
| 6 |
Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs Baraskar AK, Wistey MA, Jain V, Singisetti U, Burek G, Thibeault BJ, Lee YJ, Gossard AC, Rodwell MJW Journal of Vacuum Science & Technology B, 27(4), 2036, 2009 |