화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
Yoon JH, Kim KM, Song SJ, Seok JY, Yoon KJ, Kwon DE, Park TH, Kwon YJ, Shao X, Hwang CS
Advanced Materials, 27(25), 3811, 2015
2 Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure
Yoon JH, Song SJ, Yoo IH, Seok JY, Yoon KJ, Kwon DE, Park TH, Hwang CS
Advanced Functional Materials, 24(32), 5086, 2014
3 A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View
Seok JY, Song SJ, Yoon JH, Yoon KJ, Park TH, Kwon DE, Lim H, Kim GH, Jeong DS, Hwang CS
Advanced Functional Materials, 24(34), 5316, 2014
4 32 x 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory
Kim GH, Lee JH, Ahn Y, Jeon W, Song SJ, Seok JY, Yoon JH, Yoon KJ, Park TJ, Hwang CS
Advanced Functional Materials, 23(11), 1440, 2013
5 Highly Improved Uniformity in the Resistive Switching Parameters of TiO2 Thin Films by Inserting Ru Nanodots
Yoon JH, Han JH, Jung JS, Jeon W, Kim GH, Song SJ, Seok JY, Yoon KJ, Lee MH, Hwang CS
Advanced Materials, 25(14), 1987, 2013
6 Collective Motion of Conducting Filaments in Pt/n-Type TiO2/p-Type NiO/Pt Stacked Resistance Switching Memory
Kim KM, Song SJ, Kim GH, Seok JY, Lee MH, Yoon JH, Park J, Hwang CS
Advanced Functional Materials, 21(9), 1587, 2011
7 Methods of Set Switching for Improving the Uniformity of Filament Formation in the TiO2 Thin Film
Kim KM, Song SJ, Kim GH, Seok JY, Lee MH, Zhao JS, Hwang CS
Electrochemical and Solid State Letters, 13(6), G51, 2010
8 Influence of the Interconnection Line Resistance and Performance of a Resistive Cross Bar Array Memory
Kim GH, Kim KM, Seok JY, Lee MH, Song SJ, Hwang CS
Journal of the Electrochemical Society, 157(10), G211, 2010