| 1 |
Vapor Deposition of Highly Conformal Copper Seed Layers for Plating Through-Silicon Vias (TSVs)
Au Y, Wang QM, Li HZ, Lehn JSM, Shenai DV, Gordon RG
Journal of the Electrochemical Society, 159(6), D382, 2012 |
| 2 |
Formation of Nickel Silicide from Direct-Liquid-Injection Chemical-Vapor-Deposited Nickel Nitride Films
Li ZF, Gordon RG, Li HZ, Shenai DV, Lavoie C
Journal of the Electrochemical Society, 157(6), H679, 2010 |
| 3 |
Atomic Layer Deposition of Lanthanum-Based Ternary Oxides
Wang HT, Wang JJ, Gordon R, Lehn JSM, Li HZ, Hong D, Shenai DV
Electrochemical and Solid State Letters, 12(4), G13, 2009 |
| 4 |
Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPE
Shenai DV, DiCarlo RL, Power MB, Amamchyan A, Goyette RJ, Woelk E
Journal of Crystal Growth, 298, 172, 2007 |
| 5 |
Correlation of film properties and reduced impurity concentrations in sources for III/V-MOVPE using high-purity trimethylindium and tertiarybutylphosphine
Shenai DV, Timmons ML, DiCarlo RL, Marsman CJ
Journal of Crystal Growth, 272(1-4), 603, 2004 |
| 6 |
GC/MS analyses of MOVPE precursors and characterization of impurities in trimethylindium, trimethylaluminum and bis(cyclopentadienyl)magnesium
Grant WB, Amamchyan A, Stennick RS, Shenai DV
Journal of Crystal Growth, 248, 82, 2003 |
| 7 |
Correlation of vapor pressure equation and film properties with trimethylindium purity for the MOVPE grown III-V compounds
Shenai DV, Timmons ML, DiCarlo RL, Lemnah GK, Stennick RS
Journal of Crystal Growth, 248, 91, 2003 |
