| 1 |
Efficiency enhancement of single-junction GaAs solar cells coated with europium-doped silicate-phosphor luminescent-down-shifting layer
Ho WJ, Bai WB, Liu JJ, Shiao HP
Thin Solid Films, 660, 651, 2018 |
| 2 |
Wide temperature operational range of a 1310 nm AlGaInAs MQW-DFB laser with silicon oxynitride as a facet coating
Wang CY, Hsu JC, Shiao HP
Solid-State Electronics, 53(9), 940, 2009 |
| 3 |
Mobility and charge density tuning in double delta-doped pseudomorphic high-electron-mobility transistors grown by metal organic chemical vapor deposition
Lee CY, Shiao HP, Kuo KC, Wu HY, Lin WH
Journal of Vacuum Science & Technology B, 24(6), 2597, 2006 |
| 4 |
AlGaAs buffer structure grown by metalorganic vapor phase epitaxy for GaAs-based field-effect transistors
Shiao HP
Solid-State Electronics, 50(2), 125, 2006 |
| 5 |
Temperature dependence of photoluminescence from InAsP/InP strained quantum well structures grown by metalorganic chemical vapor deposition
Lee CY, Wu MC, Shiao HP, Ho WJ
Journal of Crystal Growth, 208(1-4), 137, 2000 |
| 6 |
Influence of growth temperature of InAsP/InP strained multiple quantum wells grown by metalorganic chemical vapor deposition
Lee CY, Shiao HP, Wu MC, Chen CW
Journal of Vacuum Science & Technology B, 17(6), 2530, 1999 |
