검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Short-channel poly-Si thin-film transistors with ultrathin channel and self-aligned tungsten-clad source/drain Zan HW, Chang TC, Shih PS, Peng DZ, Kuo PY, Huang TY, Chang CY, Liu PT Electrochemical and Solid State Letters, 7(2), G31, 2004 |
| 2 |
Characterization and formation of nanocrystalline diamonds in a-C/N films by filtered cathodic vacuum arc plasma Hsieh WJ, Shih PS, Lin JH, Lin CC, Chen US, Huang SC, Chang YS, Shih HC Thin Solid Films, 469-470, 120, 2004 |
| 3 |
Exploring metal vapor vacuum arc implanted copper to catalyze electroless-plated copper film on a TaN/FSG/Si assembly Chen US, Lin JH, Hsieh WJ, Shih PS, Weng KW, Wang DY, Chang YS, Shih HC Journal of Vacuum Science & Technology B, 21(3), 1129, 2003 |
| 4 |
Improvements of amorphous-silicon inverted-staggered thin-film transistors using high-temperature-deposited Al gate with chemical mechanical polishing Shih PS, Chang TC, Liang CY, Huang TY, Chang CY Electrochemical and Solid State Letters, 3(5), 235, 2000 |
| 5 |
Annealing effects on the interfacial reactions of Ni on Si0.76Ge0.24 and Si1-x-yGexCy Luo JS, Lin WT, Chang CY, Shih PS, Pan FM Journal of Vacuum Science & Technology A, 18(1), 143, 2000 |
| 6 |
The effects of microcrystalline silicon film structure on low-high-low band-gap thin film transistor Chang CY, Lee YS, Huang TY, Shih PS, Lin CW Materials Chemistry and Physics, 62(2), 153, 2000 |
| 7 |
Room temperature oxidation of Cu/Si0.76Ge0.24 annealed at 200 to 300 degrees C Luo JS, Lin WT, Chang CY, Shih PS Thin Solid Films, 346(1-2), 207, 1999 |