| 1 |
Identification of a new serine protease from polychaeta, Marphysa sanguinea, for its thrombolytic and anticoagulant activity
Yeon SJ, Shim KH, Hong JS, Shin HS
Korean Journal of Chemical Engineering, 34(3), 781, 2017 |
| 2 |
The low temperature epitaxy of Ge on Si (100) substrate using two different precursors of GeH4 and Ge2H6
Kil YH, Yuk SH, Kim JH, Kim TS, Kim YT, Choi CJ, Shim KH
Solid-State Electronics, 124, 35, 2016 |
| 3 |
Effective Metal Work Function of Pt Gate Electrode in Ge Metal Oxide Semiconductor Device
Chandra SVJ, Jeong MR, Shim KH, Hong HB, Lee SH, Ahn KS, Choi CJ
Journal of the Electrochemical Society, 157(5), H546, 2010 |
| 4 |
Platinum Silicided p-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Using Silicidation Through Oxide Technique
Moon RJ, Jeong MI, Chandra SV, Shim KH, Jang M, Hong HB, Chang SY, Choi CJ
Journal of the Electrochemical Society, 156(8), H621, 2009 |
| 5 |
Low temperature selective epitaxial growth of SiGe layers using various dielectric mask patterns and process conditions
Choi AR, Choi SS, Kim JT, Cho DH, Han TH, Shim KH
Applied Surface Science, 254(19), 6081, 2008 |
| 6 |
Comparative study of low frequency noise and hot-carrier reliability in SiGePD SOI pMOSFETs
Choi SS, Choi AR, Yang JW, Hwang YW, Cho DH, Shim KH
Applied Surface Science, 254(19), 6190, 2008 |
| 7 |
A study on the structure/phase transformation of titanate nanotubes synthesized at various hydrothermal temperatures
Seo HK, Kim GS, Ansari SG, Kim YS, Shin HS, Shim KH, Suh EK
Solar Energy Materials and Solar Cells, 92(11), 1533, 2008 |
| 8 |
Strain relaxation of epitaxial CoSi2 and SiGe layers in cap-Si/Si0.83Ge0.17/Si(001) and epi-CoSi2/Si0.83Ge0.17/Si(001) structures
Shin DO, Sardela MR, Ban SH, Lee NE, Shim KH
Applied Surface Science, 237(1-4), 139, 2004 |
| 9 |
Improvement of the morphological stability of Ni-silicided Si0.8Ge0.2 layers by using a molybdenum interlayer
Ok YW, Kim SH, Song YJ, Shim KH, Seong TY
Journal of Vacuum Science & Technology B, 22(3), 1086, 2004 |
| 10 |
Improved quality and reliability of ultrathin (1.4-2.3 nm) gate oxides by radical-assisted oxidation utilizing a remote ultraviolet ozone source
Song YJ, Mheen B, Kim SH, Bae HC, Kang JY, Lee YS, Lee NE, Shim KH
Journal of Vacuum Science & Technology B, 22(3), 1206, 2004 |
