| 1 |
Investigation of anisotropic wafer bending curvature in a-plane GaN films grown on r-plane sapphire substrates
Shon JW, Ohta J, Inoue S, Kobayashi A, Fujioka H
Journal of Crystal Growth, 424, 11, 2015 |
| 2 |
Comparison of line edge roughness and profile angles of chemical vapor deposited amorphous carbon etched in O-2/N-2/Ar and H-2/N-2/Ar inductively coupled plasmas
Park YR, Kwon BS, Jung CY, Heo W, Lee NE, Shon JW
Thin Solid Films, 519(20), 6755, 2011 |
| 3 |
Ultrahigh Selective Etching of SiO2 Using an Amorphous Carbon Mask in Dual-Frequency Capacitively Coupled C4F8/CH2F2/O-2/Ar Plasmas
Kwon BS, Kim JS, Lee NE, Shon JW
Journal of the Electrochemical Society, 157(3), D135, 2010 |
| 4 |
Highly selective etching of silicon nitride to physical-vapor-deposited a-C mask in dual-frequency capacitively coupled CH2F2/H-2 plasmas
Kim JS, Kwon BS, Heo W, Jung CR, Park JS, Shon JW, Lee NE
Journal of Vacuum Science & Technology A, 28(1), 65, 2010 |
| 5 |
Infinitely high etch selectivity during CH2F2/H-2 dual-frequency capacitively coupled plasma etching of silicon nitride to chemical vapor-deposited a-C
Kim JS, Kwon BS, Heo W, Jung CR, Park JS, Shon JW, Lee NE
Journal of Vacuum Science & Technology A, 28(4), 755, 2010 |
| 6 |
A numerical study of the effect of gas injection position in an inductively coupled plasma discharge
Kwon DC, Yoon NS, Han JH, Shon JW
Current Applied Physics, 9(2), 546, 2009 |
| 7 |
The structures of low dielectric constant SiOC thin films prepared by direct and remote plasma enhanced chemical vapor deposition
Heo J, Kim HJ, Han J, Shon JW
Thin Solid Films, 515(12), 5035, 2007 |
| 8 |
Oxygen ion energy distribution: Role of ionization, resonant, and nonresonant charge-exchange collisions
Babaeva NY, Lee JK, Shon JW, Hudson EA
Journal of Vacuum Science & Technology A, 23(4), 699, 2005 |
| 9 |
Sub-0.1 mu m nitride hard mask open process without precuring the ArF photoresist
Kim J, Chae YS, Lee WS, Shon JW, Kang CJ, Han WS, Moon JT
Journal of Vacuum Science & Technology B, 21(2), 790, 2003 |
| 10 |
고밀도 플라즈마 CVD 방법에 의한 TiN barrier metal 형성과 특성
최치규, 강민성, 오경숙, 이유성, 오대현, 황찬용, 손종원, 이정용, 김건호
Korean Journal of Materials Research, 9(11), 1129, 1999 |
