화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 InAsSb-based XB(n)n bariodes grown by molecular beam epitaxy on GaAs
Weiss E, Klin O, Grossmann S, Snapi N, Lukomsky I, Aronov D, Yassen M, Berkowicz E, Glozman A, Klipstein P, Fraenkel A, Shtrichman I
Journal of Crystal Growth, 339(1), 31, 2012
2 Molecular beam epitaxy grown In1-xAlxSb/InSb structures for infrared detectors
Klin O, Klipstein PC, Jacobsohn E, Saguy E, Shtrichman I, Raizman A, Weiss E
Journal of Vacuum Science & Technology B, 24(3), 1607, 2006
3 Tuning of the electronic levels in vertically stacked InAs/GaAs quantum dots using crystal growth kinetics
Gerardot BD, Shtrichman I, Hebert D, Petroff PM
Journal of Crystal Growth, 252(1-3), 44, 2003