검색결과 : 3건
No. | Article |
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1 |
InAsSb-based XB(n)n bariodes grown by molecular beam epitaxy on GaAs Weiss E, Klin O, Grossmann S, Snapi N, Lukomsky I, Aronov D, Yassen M, Berkowicz E, Glozman A, Klipstein P, Fraenkel A, Shtrichman I Journal of Crystal Growth, 339(1), 31, 2012 |
2 |
Molecular beam epitaxy grown In1-xAlxSb/InSb structures for infrared detectors Klin O, Klipstein PC, Jacobsohn E, Saguy E, Shtrichman I, Raizman A, Weiss E Journal of Vacuum Science & Technology B, 24(3), 1607, 2006 |
3 |
Tuning of the electronic levels in vertically stacked InAs/GaAs quantum dots using crystal growth kinetics Gerardot BD, Shtrichman I, Hebert D, Petroff PM Journal of Crystal Growth, 252(1-3), 44, 2003 |