검색결과 : 62건
| No. | Article |
|---|---|
| 1 |
SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices Voss LF, Ip K, Peartona SJ, Shul RJ, Overberg ME, Baca AG, Sanchez C, Stevens J, Martinez M, Armendariz MG, Wouters GA Journal of Vacuum Science & Technology B, 26(2), 487, 2008 |
| 2 |
High field transport in GaN/AlGaN heterostructures Barker JM, Ferry DK, Goodnick SM, Koleske DD, Allerman A, Shul RJ Journal of Vacuum Science & Technology B, 22(4), 2045, 2004 |
| 3 |
Experimental and theoretical study of ion distributions near 300 mu m tall steps on rf-biased wafers in high density plasmas Woodworth JR, Miller PA, Shul RJ, Abraham IC, Aragon BP, Hamilton TW, Willison CG, Kim D, Economou DJ Journal of Vacuum Science & Technology A, 21(1), 147, 2003 |
| 4 |
Inductively coupled plasma reactive ion etching of GaInAsSb and AlGaAsSb for quaternary antimonide multiple interconnected module thermophotovoltaics Peake GM, Shul RJ, Ashby CIH, Cederberg JG, Hafich MJ, Biefeld RM, Palmisiano MN Journal of Vacuum Science & Technology B, 21(2), 843, 2003 |
| 5 |
Electrical and plasma property measurements of a deep reactive ion etching Bosch process Abraham IC, Woodworth JR, Riley ME, Miller PA, Shul RJ, Willison CG Journal of Vacuum Science & Technology B, 21(3), 1112, 2003 |
| 6 |
Proton irradiation of MgO- or SC2O3 passivated AlGaN/GaN high electron mobility transistors Luo B, Ren F, Allums KK, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Dwivedi R, Fogarty TN, Wilkins R, Fitch RC, Gillespie JK, Jenkins TJ, Dettmer R, Sewell J, Via GD, Crespo A, Baca AG, Shul RJ Solid-State Electronics, 47(6), 1015, 2003 |
| 7 |
Ion energy distributions at rf-biased wafer surfaces Woodworth JR, Abraham IC, Riley ME, Miller PA, Hamilton TW, Aragon BP, Shul RJ, Willison CG Journal of Vacuum Science & Technology A, 20(3), 873, 2002 |
| 8 |
Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire Johnson JW, Han J, Baca AG, Briggs RD, Shul RJ, Wendt JR, Monier C, Ren F, Luo B, Chu SNG, Tsvetkov D, Dmitriev V, Pearton SJ Solid-State Electronics, 46(4), 513, 2002 |
| 9 |
MOCVD-grown HEMTs on Al2O3 substrates Johnson JW, Ren F, Baca AG, Briggs RD, Shul RJ, Monier C, Han J, Pearton SJ Solid-State Electronics, 46(8), 1193, 2002 |
| 10 |
Inductively coupled high-density plasma-induced etch damage of GaN MESFETs Shul RJ, Zhang L, Baca AG, Willison CG, Han J, Pearton SJ, Lee KP, Ren F Solid-State Electronics, 45(1), 13, 2001 |