1 |
The effects of oxygen annealing on the electrical characteristics of hydrothermally grown zinc oxide thin-film transistors Wang JL, Yang PY, Hsieh TY, Hwang CC, Shye DC, Lee IC Solid-State Electronics, 77, 72, 2012 |
2 |
Formation of polycrystalline thin-film transistors with stacked poly-SiGe/poly-Si channel layer for low-voltage applications Juang MH, Chang CW, Peng YS, Hwang CC, Wang JL, Shye DC Thin Solid Films, 519(10), 3393, 2011 |
3 |
Formation of sub-micrometer polycrystalline-SiGe thin-film transistors by using a thinned channel layer Juang MH, Chang CW, Huang CW, Wang JL, Shye DC, Hwang CC, Jang SL Solid-State Electronics, 54(3), 303, 2010 |
4 |
Formation of n-channel polycrystalline-Si thin-film transistors by dual source/drain implantation Juang MH, Chang CW, Wang JL, Shye DC, Hwang CC, Jang SL Solid-State Electronics, 54(5), 516, 2010 |
5 |
Formation of 30-V power DMOSFET's by implementing p-counter-doped region within n-type drift layer Juang MH, Hwang CC, Shye DC, Wang JL, Jang SL Solid-State Electronics, 54(7), 724, 2010 |
6 |
Microcrystalline-Si thin-film transistors formed by using palladium silicided source/drain contact electrode Juang MH, Peng YS, Wang JL, Shye DC, Hwang CC, Jang SL Solid-State Electronics, 54(12), 1532, 2010 |
7 |
Submicron-meter polycrystalline-SiGe thin-film transistors with tunneling field-effect-transistor structure Juang MH, Peng YS, Wang JL, Shye DC, Hwang CC, Jang SL Solid-State Electronics, 54(12), 1686, 2010 |
8 |
The formation of polycrystalline-Si thin-film transistors by using large-angle-tilt-implantation of dopant through gate sidewall spacer Juang MH, Huang CW, Chang CW, Shye DC, Hwang CC, Wang JL, Jang SL Solid-State Electronics, 53(9), 1036, 2009 |
9 |
Effects of accumulated laser pulses on (Pb,Sr)TiO3 films post-excimer laser annealed at low temperatures Wang JL, Lai YS, Chiou BS, Shye DC, Hwang CC, Cheng HC Journal of Crystal Growth, 306(1), 80, 2007 |
10 |
Dependence of polarization on temperature coefficient resistance of (Ba, Sr)TiO3 thin films post-treated by RTA Shye DC, Chiou BS, Kuo MW, Chen JS, Chou BCS, Jan CK, Wu MF, Cheng HC Electrochemical and Solid State Letters, 6(4), G55, 2003 |