화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 The effects of oxygen annealing on the electrical characteristics of hydrothermally grown zinc oxide thin-film transistors
Wang JL, Yang PY, Hsieh TY, Hwang CC, Shye DC, Lee IC
Solid-State Electronics, 77, 72, 2012
2 Formation of polycrystalline thin-film transistors with stacked poly-SiGe/poly-Si channel layer for low-voltage applications
Juang MH, Chang CW, Peng YS, Hwang CC, Wang JL, Shye DC
Thin Solid Films, 519(10), 3393, 2011
3 Formation of sub-micrometer polycrystalline-SiGe thin-film transistors by using a thinned channel layer
Juang MH, Chang CW, Huang CW, Wang JL, Shye DC, Hwang CC, Jang SL
Solid-State Electronics, 54(3), 303, 2010
4 Formation of n-channel polycrystalline-Si thin-film transistors by dual source/drain implantation
Juang MH, Chang CW, Wang JL, Shye DC, Hwang CC, Jang SL
Solid-State Electronics, 54(5), 516, 2010
5 Formation of 30-V power DMOSFET's by implementing p-counter-doped region within n-type drift layer
Juang MH, Hwang CC, Shye DC, Wang JL, Jang SL
Solid-State Electronics, 54(7), 724, 2010
6 Microcrystalline-Si thin-film transistors formed by using palladium silicided source/drain contact electrode
Juang MH, Peng YS, Wang JL, Shye DC, Hwang CC, Jang SL
Solid-State Electronics, 54(12), 1532, 2010
7 Submicron-meter polycrystalline-SiGe thin-film transistors with tunneling field-effect-transistor structure
Juang MH, Peng YS, Wang JL, Shye DC, Hwang CC, Jang SL
Solid-State Electronics, 54(12), 1686, 2010
8 The formation of polycrystalline-Si thin-film transistors by using large-angle-tilt-implantation of dopant through gate sidewall spacer
Juang MH, Huang CW, Chang CW, Shye DC, Hwang CC, Wang JL, Jang SL
Solid-State Electronics, 53(9), 1036, 2009
9 Effects of accumulated laser pulses on (Pb,Sr)TiO3 films post-excimer laser annealed at low temperatures
Wang JL, Lai YS, Chiou BS, Shye DC, Hwang CC, Cheng HC
Journal of Crystal Growth, 306(1), 80, 2007
10 Dependence of polarization on temperature coefficient resistance of (Ba, Sr)TiO3 thin films post-treated by RTA
Shye DC, Chiou BS, Kuo MW, Chen JS, Chou BCS, Jan CK, Wu MF, Cheng HC
Electrochemical and Solid State Letters, 6(4), G55, 2003