| 1 |
Low thermal budget for Si and SiGe surface preparation for FD-SOI technology
Labrot M, Cheynis F, Barge D, Muller P, Juhel M
Applied Surface Science, 371, 436, 2016 |
| 2 |
Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor-liquid-solid mechanism
Brouzet V, Salem B, Periwal P, Alcotte R, Chouchane F, Bassani F, Baron T, Ghibaudo G
Solid-State Electronics, 118, 26, 2016 |
| 3 |
Lateral solid phase epitaxy of amorphously grown Si1-xGex layers on SiO2/Si(100) substrates using in-situ RPCVD postannealing
Skibitzki O, Yamamoto Y, Schubert MA, Tillack B
Thin Solid Films, 593, 91, 2015 |
| 4 |
Fabrication and evaluation of propagation loss of Si/SiGe/Si photonic-wire waveguides for Si based optical modulator
Kim Y, Takenaka M, Osada T, Hata M, Takagi S
Thin Solid Films, 557, 342, 2014 |
| 5 |
Phase transition of hydrogenated SiGe thin films in plasma-enhanced chemical vapor deposition
Yun SJ, Kim JK, Lee SH, Lee YJ, Lim JW
Thin Solid Films, 546, 362, 2013 |
| 6 |
Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures
Evans PG, Savage DE, Prance JR, Simmons CB, Lagally MG, Coppersmith SN, Eriksson MA, Schulli TU
Advanced Materials, 24(38), 5217, 2012 |
| 7 |
Behavior of N atoms after thermal nitridation of Si1-xGex surface
Kawashima T, Sakuraba M, Tillack B, Murota J
Thin Solid Films, 520(8), 3392, 2012 |
| 8 |
Investigation of 3-D stacked NAND flash memory cell string having 4F(2) cell size and shield layer for suppressing cross-talk
Jeong MK, Lee JW, Lee JH
Current Applied Physics, 11(2), E2, 2011 |
| 9 |
Heavy carbon atomic-layer doping at Si-1 (-) Ge-x(x)/Si heterointerface
Hirano T, Sakuraba M, Tillack B, Murota J
Thin Solid Films, 518, S222, 2010 |
| 10 |
Selective vapor phase etching of SiGe by HCl in a RPCVD reactor
Yamamoto Y, Kopke K, Kurps R, Tillack B
Applied Surface Science, 254(19), 6037, 2008 |
